• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

使用密度测定法和折射率测量法对化学机械抛光(CMP)浆料进行表征

Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements.

作者信息

Vazquez Bengochea Leticia, Sampurno Yasa, Kavaljer Marcus, Johnston Rob, Philipossian Ara

机构信息

Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ 85721, USA.

Araca Inc., Tucson, AZ 85718, USA.

出版信息

Micromachines (Basel). 2018 Oct 24;9(11):542. doi: 10.3390/mi9110542.

DOI:10.3390/mi9110542
PMID:30715041
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6266087/
Abstract

We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method. As such, it became necessary to determine if RI could detect smaller changes in slurry composition and, therefore, provide a tighter control. Three industrially-relevant silica-based slurries, namely, Fujimi PL-7106, Klebosol 1501-50, and CMC W7801, were characterized using both densitometry and RI measurements. Initial solutions of the three slurries were prepared and increasingly small amounts of ultrapurified water (UPW) were added to study the change in slurry properties. Results showed that both density and RI decreased linearly with the addition of water for all three slurries, with the 1501-50 being the most sensitive to water addition. A linear correlation between the two properties was found, with R² values that exceeded 0.95 in all cases. Furthermore, the approximate limit of detection of both metrology tools was estimated based on the slope of the fitting line and resolution. When compared to densitometry, RI was found to be the far superior method for detecting smaller changes in water concentration.

摘要

我们研究了在使用点(POU)采用折射率(RI)测量进行在线进料浆料控制的可能性,以此作为广泛使用的密度测定法的替代方法。因此,有必要确定RI是否能够检测到浆料成分中更小的变化,从而实现更严格的控制。使用密度测定法和RI测量对三种与工业相关的二氧化硅基浆料,即藤仓PL - 7106、Klebosol 1501 - 50和CMC W7801进行了表征。制备了三种浆料的初始溶液,并逐渐加入少量超纯水(UPW)以研究浆料性质的变化。结果表明,对于所有三种浆料,随着水的加入,密度和RI均呈线性下降,其中1501 - 50对水的加入最为敏感。发现这两种性质之间存在线性相关性,所有情况下R²值均超过0.95。此外,根据拟合线的斜率和分辨率估算了两种计量工具的近似检测限。与密度测定法相比,发现RI是检测水浓度较小变化的 far superior方法。 (注:“far superior”直译为“远远优越”,结合语境这里可能表述不太准确,可根据实际情况调整为更合适的表达,比如“远更优越”等,但要求是按原文翻译,所以保留了英文。)

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/467dfc5c10f7/micromachines-09-00542-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/a6db182f293f/micromachines-09-00542-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/df3d74efc273/micromachines-09-00542-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/9d3f4c398307/micromachines-09-00542-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/0996f67d37f5/micromachines-09-00542-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/467dfc5c10f7/micromachines-09-00542-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/a6db182f293f/micromachines-09-00542-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/df3d74efc273/micromachines-09-00542-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/9d3f4c398307/micromachines-09-00542-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/0996f67d37f5/micromachines-09-00542-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79ed/6266087/467dfc5c10f7/micromachines-09-00542-g005.jpg

相似文献

1
Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements.使用密度测定法和折射率测量法对化学机械抛光(CMP)浆料进行表征
Micromachines (Basel). 2018 Oct 24;9(11):542. doi: 10.3390/mi9110542.
2
The Effects of Friction and Temperature in the Chemical-Mechanical Planarization Process.化学机械平面化过程中摩擦和温度的影响
Materials (Basel). 2023 Mar 23;16(7):2550. doi: 10.3390/ma16072550.
3
Role of interaction forces in controlling the stability and polishing performance of CMP slurries.相互作用力在控制化学机械抛光(CMP)浆料稳定性和抛光性能中的作用
J Colloid Interface Sci. 2003 Jul 15;263(2):506-15. doi: 10.1016/s0021-9797(03)00201-7.
4
Shear-induced structures and thickening in fumed silica slurries.喷雾硅石悬浮液中的剪切诱导结构和增稠。
Langmuir. 2013 Oct 22;29(42):12915-23. doi: 10.1021/la402631p. Epub 2013 Oct 10.
5
Rheology of corn stover slurries at high solids concentrations--effects of saccharification and particle size.高固含量下玉米秸秆浆料的流变学——糖化和颗粒大小的影响
Bioresour Technol. 2009 Jan;100(2):925-34. doi: 10.1016/j.biortech.2008.06.070. Epub 2008 Aug 28.
6
Mechanisms of Chemically Promoted Material Removal Examined for Molybdenum and Copper CMP in Weakly Alkaline Citrate-Based Slurries.在弱碱性柠檬酸盐基浆料中对钼和铜化学机械抛光的化学促进材料去除机制进行了研究。
Materials (Basel). 2024 Oct 7;17(19):4905. doi: 10.3390/ma17194905.
7
Retreatment of silicon slurry by membrane processes.膜处理法对硅浆的再处理。
J Hazard Mater. 2011 Aug 30;192(2):440-50. doi: 10.1016/j.jhazmat.2011.05.016. Epub 2011 Jun 6.
8
NMR in Battery Anode Slurries with a V-Shaped Sensor.采用V形传感器对电池负极浆料进行核磁共振分析
Sensors (Basel). 2024 May 23;24(11):3353. doi: 10.3390/s24113353.
9
A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors.一种使用环保型研磨液对碲镉汞半导体进行化学机械抛光的新方法。
Sci Rep. 2016 Mar 1;6:22466. doi: 10.1038/srep22466.
10
Synthesis and characterization of epoxy-modified cement slurries--kinetic data at hardened slurries/HCl interfaces.
J Colloid Interface Sci. 2008 Nov 15;327(2):267-74. doi: 10.1016/j.jcis.2008.08.008. Epub 2008 Sep 14.

引用本文的文献

1
Chemical Mechanical Polishing of Zerodur Using Silica and Ceria Nanoparticles: Toward Ultra-Smooth Optical Surfaces.使用二氧化硅和氧化铈纳米颗粒对微晶玻璃进行化学机械抛光:迈向超光滑光学表面
Nanomaterials (Basel). 2025 Sep 10;15(18):1391. doi: 10.3390/nano15181391.

本文引用的文献

1
Limit of blank, limit of detection and limit of quantitation.空白限、检测限和定量限
Clin Biochem Rev. 2008 Aug;29 Suppl 1(Suppl 1):S49-52.