Liu Xi, Xia Zhengliang, Jin Xiaoshi, Lee Jong-Ho
School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
School of EECS Eng. and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Shinlim-Dong, Kwanak-Gu, Seoul, 151-742, Korea.
Nanoscale Res Lett. 2019 Feb 4;14(1):43. doi: 10.1186/s11671-019-2879-0.
A novel high-performance rectangular gate U channel FET (RGUC FET) for extreme integrated distance between source and drain contacts is proposed in this paper. The RGUC FET represents nearly ideal subthreshold characteristics till the distance between source/drain (S/D) contacts reduced to 2 nm. Different from the other recessed or U-shaped channel-based FETs, the gate contacts do not need to be formed in the recessed region but only in a layer of spacer for the insulation between the two vertical parts on both sides of the U channel. Its structural advantages make it possible to be applied to manufacture integrated circuits with higher integration for extreme integrated distance between source and drain contacts. The electrical properties of the RGUC FET were scrupulously investigated by studying the influence of design parameters including the horizontal distance between S/D contacts, the extension height of S/D region, and the thickness and material of the gate oxide layer. The electrical properties of the RGUC FET are verified by quantum simulation. Compared to the other non-planner channel multi-gate FETs, the novel RGUC FET is suitable for higher integration.
本文提出了一种新型高性能矩形栅U型沟道场效应晶体管（RGUC FET），用于源极和漏极接触之间的极短集成距离。在源极/漏极（S/D）接触之间的距离减小到2nm之前，RGUC FET表现出近乎理想的亚阈值特性。与其他基于凹槽或U形沟道的场效应晶体管不同，栅极接触不需要在凹槽区域形成，而只需在U形沟道两侧两个垂直部分之间用于绝缘的一层间隔层中形成。其结构优势使其有可能应用于制造具有更高集成度的集成电路，以实现源极和漏极接触之间的极短集成距离。通过研究包括S/D接触之间的水平距离、S/D区域的延伸高度以及栅氧化层的厚度和材料等设计参数的影响，对RGUC FET的电学特性进行了细致研究。RGUC FET的电学特性通过量子模拟得到验证。与其他非平面沟道多栅极场效应晶体管相比，新型RGUC FET适用于更高的集成度。
