Liu Xi, Li Mengmeng, Zhang Shouqiang, Jin Xiaoshi
School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.
Heliyon. 2023 Aug 28;9(9):e19298. doi: 10.1016/j.heliyon.2023.e19298. eCollection 2023 Sep.
A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.
提出了一种由单栅极控制的高度集成的非易失性双向可重构场效应晶体管（SGCN-BRFET）。该器件可同时实现非易失性功能、双向功能和可重构功能。与BRFET的独立供电编程栅极（PG）不同，所提出的SGCN-BRFET的编程操作可由控制栅极（CG）自身通过在源极/漏极两侧形成的浮置编程栅极（FPG）中存储正电荷或负电荷来独立完成。此后，互连可得到简化。通过向FPG中注入不同类型的电荷对其进行编程，可重构SGCN-BRFET的导电类型。通过优化存储电荷的数量，可改变FPG有效电压，以实现更高的正向电流和更低的漏电流。对所提出的SGCN-RFET的物理机制进行了系统分析。将该器件的性能与BRFET进行了比较。还详细讨论了电荷量对器件性能的影响。
