School of Information Science and Engineering, Shenyang University of Technology, Shenyang, China.
PLoS One. 2023 May 19;18(5):e0285320. doi: 10.1371/journal.pone.0285320. eCollection 2023.
In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Silicon body of the proposed VPISDC-HSB-BTFET is etched into a U-shaped structure. By etching both sides of the silicon body to form vertically plug-in source drain contacts, the source and drain electrodes are plugged into a certain height of the vertical parts of both sides of the U-shaped silicon body. Thereafter, the efficient area of the band-to-band tunneling generation region near the source drain contacts is significantly increased, so as to achieve sensitive ON-state current driving ability. Comparing to the mainstream FinFET technology, lower subthreshold swing, lower static power consumption and Higher Ion-Ioff ratio can be achieved.
在本文中，我们提出了一种基于高肖特基势垒源漏接触双边栅和辅助栅控制双向隧穿场效应晶体管（HSB-BTFET）的高灵敏度垂直插件源漏接触高肖特基势垒双边栅和辅助栅控制双向隧穿场效应晶体管（VPISDC-HSB-BTFET）。它可以实现比之前提出的基于高肖特基势垒源/漏接触双边栅和辅助栅控制双向隧穿场效应晶体管（HSB-BTFET）更高的正向电流驱动能力。所提出的 VPISDC-HSB-BTFET 的硅体被刻蚀成 U 形结构。通过刻蚀硅体的两侧形成垂直插件源漏接触，源极和漏极被插入 U 形硅体两侧垂直部分的一定高度。此后，显著增加了源漏接触附近的带带隧穿产生区的有效面积，从而实现了灵敏的导通状态电流驱动能力。与主流的 FinFET 技术相比，可以实现更低的亚阈值摆幅、更低的静态功耗和更高的 Ion-Ioff 比。
