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二维半导体和单晶三氧化二锑直接生长在单层石墨烯上。

Two-dimensional semiconducting and single-crystalline antimony trioxide directly-grown on monolayer graphene.

机构信息

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.

出版信息

Chem Commun (Camb). 2019 Feb 21;55(17):2473-2476. doi: 10.1039/c8cc09416k.

Abstract

The first successful synthesis and characterization of single-crystalline two-dimensional (2D) semiconducting antimony tri oxide (Sb2O3) by direct chemical vapor deposition (CVD) growth on monolayer graphene is presented herein. The Sb2O3 flakes on graphene are regular triangles with smooth edges and a thickness of ∼1.45 nm. The thickness dependence of the Raman spectra and scanning Kelvin probe microscopy (SKPM) were systematically studied.

摘要

本文首次通过在单层石墨烯上直接化学气相沉积(CVD)生长成功合成和表征了单晶二维(2D)半导体三氧化二锑(Sb2O3)。石墨烯上的 Sb2O3 薄片呈规则三角形,边缘光滑,厚度约为 1.45nm。系统研究了厚度对拉曼光谱和扫描开尔文探针显微镜(SKPM)的影响。

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