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迈向用于CMOS-MEMS技术中非制冷红外传感的超灵敏温度传感器

Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS⁻MEMS Technology.

作者信息

Göktaş Hasan

机构信息

Electrical and Electronic Engineering, Harran University, Şanlıurfa 63000, Turkey.

出版信息

Micromachines (Basel). 2019 Feb 6;10(2):108. doi: 10.3390/mi10020108.

DOI:10.3390/mi10020108
PMID:30736290
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6412715/
Abstract

Microbolometers and photon detectors are two main technologies to address the needs in Infrared Sensing applications. While the microbolometers in both complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technology offer many advantages over photon detectors, they still suffer from nonlinearity and relatively low temperature sensitivity. This paper not only offers a reliable solution to solve the nonlinearity problem but also demonstrate a noticeable potential to build ultra-sensitive CMOS⁻MEMS temperature sensor for infrared (IR) sensing applications. The possibility of a 31× improvement in the total absolute frequency shift with respect to ambient temperature change is verified via both COMSOL (multiphysics solver) and theory. Nonlinearity problem is resolved by an operating temperature sensor around the beam bending point. The effect of both pull-in force and dimensional change is analyzed in depth, and a drastic increase in performance is achieved when the applied pull-in force between adjacent beams is kept as small as possible. The optimum structure is derived with a length of 57 µm and a thickness of 1 µm while avoiding critical temperature and, consequently, device failure. Moreover, a good match between theory and COMSOL is demonstrated, and this can be used as a guidance to build state-of-the-art designs.

摘要

微测辐射热计和光子探测器是满足红外传感应用需求的两种主要技术。虽然互补金属氧化物半导体(CMOS)和微机电系统(MEMS)技术中的微测辐射热计相对于光子探测器具有许多优势,但它们仍然存在非线性和相对较低的温度灵敏度问题。本文不仅提供了一种可靠的解决方案来解决非线性问题,还展示了构建用于红外(IR)传感应用的超灵敏CMOS-MEMS温度传感器的显著潜力。通过COMSOL(多物理场求解器)和理论验证了相对于环境温度变化总绝对频移提高31倍的可能性。通过在梁弯曲点附近操作温度传感器解决了非线性问题。深入分析了拉入力和尺寸变化的影响,当相邻梁之间施加的拉入力尽可能小时,性能实现了大幅提升。得出了长度为57 µm、厚度为1 µm的最佳结构,同时避免了临界温度,从而避免了器件故障。此外,还展示了理论与COMSOL之间的良好匹配,这可作为构建先进设计的指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/87652aad7feb/micromachines-10-00108-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/d65bf9a4fb0c/micromachines-10-00108-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/89d3412bb699/micromachines-10-00108-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/f560e73cf607/micromachines-10-00108-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/87652aad7feb/micromachines-10-00108-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/d65bf9a4fb0c/micromachines-10-00108-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/89d3412bb699/micromachines-10-00108-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/f560e73cf607/micromachines-10-00108-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6aae/6412715/87652aad7feb/micromachines-10-00108-g004.jpg

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本文引用的文献

1
Attogram mass sensing based on silicon microbeam resonators.基于硅微梁谐振器的阿克质量传感
Sci Rep. 2017 Apr 21;7:46660. doi: 10.1038/srep46660.
2
Plasmonic piezoelectric nanomechanical resonator for spectrally selective infrared sensing.用于光谱选择性红外传感的表面等离子体激元压电纳米机械谐振器
Nat Commun. 2016 Apr 15;7:11249. doi: 10.1038/ncomms11249.
3
Single-crystal diamond nanomechanical resonators with quality factors exceeding one million.单晶金刚石纳米机械谐振器的品质因数超过一百万。
基于CMOS-MEMS技术的微测辐射热计热传感极限突破的分析与仿真
Micromachines (Basel). 2019 Oct 29;10(11):733. doi: 10.3390/mi10110733.
4
Editorial for the Special Issue on Development of CMOS-MEMS/NEMS Devices.《关于CMOS-MEMS/NEMS器件发展的特刊》编辑评论
Micromachines (Basel). 2019 Apr 24;10(4):273. doi: 10.3390/mi10040273.
Nat Commun. 2014 Apr 8;5:3638. doi: 10.1038/ncomms4638.
4
Nanomechanical torsional resonators for frequency-shift infrared thermal sensing.用于频移红外热传感的纳机械扭转谐振器。
Nano Lett. 2013 Apr 10;13(4):1528-34. doi: 10.1021/nl304687p. Epub 2013 Mar 7.
5
An atomic-resolution nanomechanical mass sensor.一种原子分辨率的纳米机械质量传感器。
Nat Nanotechnol. 2008 Sep;3(9):533-7. doi: 10.1038/nnano.2008.200. Epub 2008 Jul 20.
6
Zeptogram-scale nanomechanical mass sensing.zeptogram 级纳米机械质量传感
Nano Lett. 2006 Apr;6(4):583-6. doi: 10.1021/nl052134m.