通过噪声-结合能相互作用调节杂质掺杂量子点的抗磁磁化率

Arif Sk Md, Bera Aindrila, Ghosh Manas

Department of Chemistry, Physical Chemistry Section, Visva-Bharati University, Santiniketan, Birbhum 731235, West Bengal, India.

Heliyon. 2019 Jan 29;5(1):e01147. doi: 10.1016/j.heliyon.2019.e01147. eCollection 2019 Jan.

In the present work we explore the role of on the of doped quantum dot (QD). has been invoked for the above exploration. And Gaussian impurity acts as a dopant in the present study. The mode of inclusion of noise to the system significantly affects the above interplay and thus prominently modulates the DMS profile. The outcomes of the inspection unfolds the way by which DMS of doped QD can be regulated by prudent adjustment of noise-BE interaction.

在本工作中，我们探讨了[未提及具体内容]对掺杂量子点（QD）的[未提及具体内容]的作用。[未提及具体内容]已被用于上述探索。在本研究中，高斯杂质作为一种掺杂剂。向系统中引入噪声的方式显著影响上述相互作用，从而显著调制了DMS分布。检查结果揭示了通过谨慎调整噪声 - BE相互作用来调节掺杂量子点的DMS的方法。