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在硫族元素蒸汽中,由纳米合金种子实现原子级薄量子纳米带的宽度依赖性连续生长。

Width-dependent continuous growth of atomically thin quantum nanoribbons from nanoalloy seeds in chalcogen vapor.

作者信息

Li Xufan, Wyss Samuel, Yanev Emanuil, Li Qing-Jie, Wu Shuang, Sun Yongwen, Unocic Raymond R, Stage Joseph, Strasbourg Matthew, Sassi Lucas M, Zhu Yingxin, Li Ju, Yang Yang, Hone James, Borys Nicholas, Schuck P James, Harutyunyan Avetik R

机构信息

Honda Research Institute USA, Inc., San Jose, CA, 95134, USA.

Department of Physics, Montana State University, Bozeman, MT, 59717, USA.

出版信息

Nat Commun. 2024 Nov 21;15(1):10080. doi: 10.1038/s41467-024-54413-9.

DOI:10.1038/s41467-024-54413-9
PMID:39572579
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11582360/
Abstract

Nanoribbons (NRs) of atomic layer transition metal dichalcogenides (TMDs) can boost the rapidly emerging field of quantum materials owing to their width-dependent phases and electronic properties. However, the controllable downscaling of width by direct growth and the underlying mechanism remain elusive. Here, we demonstrate the vapor-liquid-solid growth of single crystal of single layer NRs of a series of TMDs (MeX: Me = Mo, W; X = S, Se) under chalcogen vapor atmosphere, seeded by pre-deposited and respective transition metal-alloyed nanoparticles that also control the NR width. We find linear dependence of growth rate on supersaturation, known as a criterion for continues growth mechanism, which decreases with decreasing of NR width driven by the Gibbs-Thomson effect. The NRs show width-dependent photoluminescence and strain-induced quantum emission signatures with up to ≈ 90% purity of single photons. We propose the path and underlying mechanism for width-controllable growth of TMD NRs for applications in quantum optoelectronics.

摘要

原子层过渡金属二硫属化物(TMDs)的纳米带(NRs)因其与宽度相关的相和电子特性,能够推动快速兴起的量子材料领域的发展。然而,通过直接生长实现宽度的可控缩小及其潜在机制仍然难以捉摸。在此,我们展示了在硫属元素蒸气气氛下,由预先沉积的相应过渡金属合金化纳米颗粒作为晶种,实现一系列TMDs(MeX:Me = Mo、W;X = S、Se)单层NRs单晶的气-液-固生长,这些纳米颗粒还能控制NR的宽度。我们发现生长速率与过饱和度呈线性关系,这是连续生长机制的一个标准,随着由吉布斯-汤姆逊效应驱动的NR宽度减小而降低。这些NRs表现出与宽度相关的光致发光以及应变诱导的量子发射特征,单光子纯度高达约90%。我们提出了用于量子光电子学应用的TMD NRs宽度可控生长的途径和潜在机制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/b9a7b83bb2b3/41467_2024_54413_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/2b8e1944ff2f/41467_2024_54413_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/f89e2d77fdea/41467_2024_54413_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/acb454a83b25/41467_2024_54413_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/b9a7b83bb2b3/41467_2024_54413_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/2b8e1944ff2f/41467_2024_54413_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/f89e2d77fdea/41467_2024_54413_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/acb454a83b25/41467_2024_54413_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19d4/11582360/b9a7b83bb2b3/41467_2024_54413_Fig4_HTML.jpg

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