Zhu Hongmei, Zhang Zhengjie, Liu Minsu, Fan Weiren, Jiang Xuchuan
School of Mechanical Engineering, University of South China, Hengyang, Hunan 421001, China.
Department of Chemical Engineering, Monash University, Clayton, VIC 3800, Australia.
J Nanosci Nanotechnol. 2019 Jun 1;19(6):3597-3603. doi: 10.1166/jnn.2019.16093.
This study represents a facile but effective electrodeposition method to fabricate vanadium dioxide (VO₂) thin films on fluorine doped tin oxide (FTO) glass at room temperature. The film microstructure (thickness, surface structure, particle size and composition) and relevant optical properties were investigated by several advanced techniques. The pertinent variables that can affect the thin film formation and structure, such as deposition potential, time and post-treatment annealing temperature were also studied. It was found that the film thickness could be tuned from 35 to 130 nm by adjusting the potential from -1.22 to -1.35 V, and consequently leading to optical transmittance decreasing from ∼60% to ∼38% in the wavelength of 500-1000 nm, further confirmed by computational simulations using three-dimension (3D) finite-difference time-domain method. The hysteresis loop of the generated VO₂ film on FTO glass shows that the phase transition temperature from monoclinic to rutile is around 73 °C, a little higher than pure monoclinic VO₂ (∼68 °C) in this study. This proposed electrodeposition method is possible to extend into obtaining metal oxide films with tuneable surface properties for thermochromic smart devices.
本研究提出了一种简便而有效的电沉积方法，可在室温下于氟掺杂氧化锡（FTO）玻璃上制备二氧化钒（VO₂）薄膜。通过多种先进技术研究了薄膜的微观结构（厚度、表面结构、粒径和成分）及相关光学性质。还研究了影响薄膜形成和结构的相关变量，如沉积电位、时间和后处理退火温度。研究发现，通过将电位从-1.22 V调整至-1.35 V，薄膜厚度可在35至130 nm之间调节，从而导致在500 - 1000 nm波长范围内的光学透过率从约60%降至约38%，使用三维（3D）时域有限差分法进行的计算模拟进一步证实了这一点。在FTO玻璃上生成的VO₂薄膜的磁滞回线表明，从单斜相到金红石相的相变温度约为73 °C，略高于本研究中的纯单斜相VO₂（约68 °C）。这种提出的电沉积方法有可能扩展用于获得具有可调表面性质的金属氧化物薄膜，以用于热致变色智能器件。
