Wang Dongya, Yi Peng, Wang Lin, Zhang Lu, Li Hai, Lu Min, Xie Xiaoji, Huang Ling, Huang Wei
Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China.
Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, China.
Front Chem. 2019 Jan 28;7:21. doi: 10.3389/fchem.2019.00021. eCollection 2019.
Black phosphorus, an emerging layered material, exhibits promising applications in diverse fields, ranging from electronics to optics. However, controlled synthesis of black phosphorus, particularly its few-layered counterparts, is still challenging, which should be due to the unclear growth mechanism of black phosphorus. Here, taking the most commonly used Sn-I assisted synthesis of black phosphorus as an example, we propose a growth mechanism of black phosphorus crystals by monitoring the reactions and analyzing the as-synthesized products. In the proposed mechanism, SnPI is the active site for the growth of black phosphorus, and the black phosphorus crystals are formed with the assistance of SnI, following a polymerization-like process. In addition, we suggest that all Sn-I assisted synthesis of black phosphorus should share the same reaction mechanism despite the differences among Sn-I containing additives. Our results shown here should shed light on the controlled synthesis of black phosphorus and facilitate further applications of black phosphorus.
黑磷作为一种新兴的层状材料，在从电子学到光学等不同领域展现出了广阔的应用前景。然而，黑磷的可控合成，尤其是其少层对应物的合成，仍然具有挑战性，这应该归因于黑磷生长机制尚不清楚。在此，以最常用的Sn-I辅助合成黑磷为例，我们通过监测反应并分析合成产物，提出了一种黑磷晶体的生长机制。在所提出的机制中，SnPI是黑磷生长的活性位点，黑磷晶体在SnI的辅助下通过类似聚合的过程形成。此外，我们认为，尽管含Sn-I的添加剂存在差异，但所有Sn-I辅助合成黑磷都应具有相同的反应机制。我们在此展示的结果应为黑磷的可控合成提供启示，并促进黑磷的进一步应用。
