Pielmeier Markus R P, Nilges Tom
Department of Chemistry, Technical University of Munich (TUM), Lichtenbergstrasse 4, 85748, Garching b. München, Germany.
Angew Chem Int Ed Engl. 2021 Mar 15;60(12):6816-6823. doi: 10.1002/anie.202016257. Epub 2021 Feb 15.
Phosphorene-the monolayered material of the element allotrope black phosphorus (P )-and SnIP are 2D and 1D semiconductors with intriguing physical properties. P and SnIP have in common that they can be synthesized via short way transport or mineralization using tin, tin(IV) iodide and amorphous red phosphorus. This top-down approach is the most important access route to phosphorene. The two preparation routes are closely connected and differ mainly in reaction temperature and molar ratios of starting materials. Many speculative intermediates or activator side phases have been postulated especially for top-down P /phosphorene synthesis, such as Hittorf's phosphorus or Sn P I clathrate. The importance of phosphorus-based 2D and 1D materials for energy conversion, storage, and catalysis inspired us to elucidate the formation mechanisms of these two compounds. Herein, we report on the reaction mechanisms of P /phosphorene and SnIP from P and SnI via direct gas phase formation.
磷烯——元素同素异形体黑磷（P）的单层材料——和SnIP是具有有趣物理性质的二维和一维半导体。P和SnIP的共同之处在于，它们可以通过使用锡、碘化锡（IV）和无定形红磷的短程传输或矿化作用来合成。这种自上而下的方法是制备磷烯的最重要途径。这两种制备路线紧密相连，主要区别在于反应温度和起始材料的摩尔比。特别是对于自上而下的P/磷烯合成，已经假设了许多推测性的中间体或活化剂副相，如希托夫磷或SnPI包合物。基于磷的二维和一维材料在能量转换、存储和催化方面的重要性激发我们去阐明这两种化合物的形成机制。在此，我们报告了通过直接气相形成从P和SnI合成P/磷烯和SnIP的反应机制。
