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气溶胶沉积工艺在柔性电子器件中的适用性及具有缓冲效应的成膜机制研究

Applicability of Aerosol Deposition Process for flexible electronic device and determining the Film Formation Mechanism with Cushioning Effects.

作者信息

Lee Chuljun, Cho Myung-Yeon, Kim Myungjun, Jang Jiyun, Oh Yoonsub, Oh Kihoon, Kim Seunghyun, Park Byungwook, Kim Byungkwan, Koo Sang-Mo, Oh Jong-Min, Lee Daeseok

机构信息

Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Seoul, 01897, Republic of Korea.

出版信息

Sci Rep. 2019 Feb 15;9(1):2166. doi: 10.1038/s41598-019-38477-y.

DOI:10.1038/s41598-019-38477-y
PMID:30770846
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6377626/
Abstract

In this paper, we demonstrated the feasibility of the Aerosol Deposition (AD) method which can be adapted as a future fabrication process for flexible electronic devices. On the basis of this method's noticeable advantages such as room-temperature processing, suitability for mass production, wide material selectivity, and direct fabrication on a flexible substrate, we fabricated and evaluated a flexible conductive bridge random access memory (CBRAM) to confirm the feasibility of this method. The CBRAM was fabricated by the AD-method, and a novel film formation mechanism was observed and analyzed. Considering that the analyzed film formation mechanism is notably different with previously reported for film formation mechanisms of the AD method, these results of study will provide strong guidance for the fabrication of flexible electronic device on ductile substrate.

摘要

在本文中,我们展示了气溶胶沉积(AD)方法的可行性,该方法可作为未来柔性电子器件的制造工艺。基于该方法的显著优点,如室温处理、适合大规模生产、广泛的材料选择性以及可在柔性基板上直接制造,我们制造并评估了一种柔性导电桥随机存取存储器(CBRAM)以确认该方法的可行性。通过AD方法制造了CBRAM,并观察和分析了一种新颖的成膜机制。鉴于所分析的成膜机制与先前报道的AD方法的成膜机制显著不同,这些研究结果将为在可延展基板上制造柔性电子器件提供有力指导。

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本文引用的文献

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Preparation of Ultrasensitive Humidity-Sensing Films by Aerosol Deposition.气溶胶沉积法制备超高灵敏度湿度感应薄膜。
ACS Appl Mater Interfaces. 2018 Jan 10;10(1):851-863. doi: 10.1021/acsami.7b14082. Epub 2017 Dec 20.
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Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes.使用 Pt 电极之间的掺 Ag 聚合物电解质进行纳米 Ag 丝的电成形和电断裂,用于导电桥接随机存取存储单元。
Sci Rep. 2017 Jun 8;7(1):3065. doi: 10.1038/s41598-017-02330-x.
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一种制造气体传感器的快速工艺。
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