Kang Dong-Ho, Park Nam-Gyu
School of Chemical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Adv Mater. 2019 Aug;31(34):e1805214. doi: 10.1002/adma.201805214. Epub 2019 Feb 18.
Current-density-voltage (J-V) hysteresis in perovskite solar cells (PSCs) is a critical issue because it is related to power conversion efficiency and stability. Although parameters affecting the hysteresis have been already reported and reviewed, little investigation is reported on scan-direction-dependent J-V curves depending on perovskite composition. This review investigates J-V hysteric behaviors depending on perovskite composition in normal mesoscopic and planar structure. In addition, methodologies toward hysteresis-free PSCs are proposed. There is a specific trend in hysteresis in terms of J-V curve shape depending on composition. Ion migration combined with nonradiative recombination near interfaces plays a critical role in generating hysteresis. Interfacial engineering is found to be an effective method to reduce the hysteresis; however, bulk defect engineering is the most promising method to remove the hysteresis. Among the studied methods, KI doping is proved to be a universal approach toward hysteresis-free PSCs regardless of perovskite composition. It is proposed from the current studies that engineering of perovskite film near the electron transporting layer (ETL) and the hole transporting layer (HTL) is of vital importance for achieving hysteresis-free PSCs and extremely high efficiency.
钙钛矿太阳能电池（PSC）中的电流密度-电压（J-V）滞后现象是一个关键问题，因为它与功率转换效率和稳定性相关。尽管已经报道并综述了影响滞后现象的参数，但关于取决于钙钛矿组成的扫描方向相关J-V曲线的研究报道较少。本综述研究了正常介观和平面结构中取决于钙钛矿组成的J-V滞后行为。此外，还提出了实现无滞后PSC的方法。根据组成，J-V曲线形状的滞后现象存在特定趋势。界面附近的离子迁移与非辐射复合在产生滞后现象中起关键作用。发现界面工程是减少滞后现象的有效方法；然而，体缺陷工程是消除滞后现象最有前景的方法。在所研究的方法中，无论钙钛矿组成如何，KI掺杂被证明是实现无滞后PSC的通用方法。从当前研究中可以看出，电子传输层（ETL）和空穴传输层（HTL）附近的钙钛矿薄膜工程对于实现无滞后PSC和极高效率至关重要。
