Kim Kyunghwan, Ki Bugeun, Choi Keorock, Lee Seungmin, Oh Jungwoo
School of Integrated Technology, Yonsei Institute of Convergence Technology , Yonsei University , 85 Songdogwahak-ro , Yeonsu-gu, Incheon 21983 , Republic of Korea.
ACS Appl Mater Interfaces. 2019 Apr 10;11(14):13574-13580. doi: 10.1021/acsami.9b00456. Epub 2019 Mar 1.
We introduce a method for the direct imprinting of GaAs substrates using wet-chemical stamping. The predefined patterns on the stamps etch the GaAs substrates via metal-assisted chemical etching. This is a resist-free method in which the stamp and the GaAs substrate are directly pressed together. Imprinting and etching occur concurrently until the stamp is released from the substrate. The stamp imprinting results in a three-dimensional anisotropic etching profile and does not impair the semiconductor crystallinity in the wet-chemical bath. Hole, trench, and complex patterns can be imprinted on the GaAs substrate after stamping with pillar, fin, and letter shapes. In addition, we demonstrate the formation of sub-100 nm trench patterns on GaAs through a single-step stamping process. Consecutive imprinting using a single stamp is possible, demonstrating the recyclability of the stamp, which can be used more than 10 times. The greatest benefit of this technique is the simple method of patterning by integrating the lithographic and etching processes, making this a high-throughput and low-cost technique.
我们介绍一种使用湿化学冲压直接在砷化镓衬底上进行压印的方法。印章上预先定义的图案通过金属辅助化学蚀刻对砷化镓衬底进行蚀刻。这是一种无光刻胶的方法，其中印章和砷化镓衬底直接压在一起。压印和蚀刻同时发生，直到印章从衬底上移除。印章压印会产生三维各向异性蚀刻轮廓，并且不会损害湿化学浴中的半导体结晶度。在用柱状、鳍状和字母形状进行冲压后，可以在砷化镓衬底上压印出孔、沟槽和复杂图案。此外，我们通过单步冲压工艺展示了在砷化镓上形成亚100纳米沟槽图案。使用单个印章进行连续压印是可行的，这证明了印章的可回收性，其可使用超过10次。该技术的最大优点是通过整合光刻和蚀刻工艺实现图案化的简单方法，使其成为一种高通量且低成本的技术。
