Kim YoungJa, Jang HwanSoo, Park SooYeon, Ha Donghan, Lee JaeJong
Nano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-600, Korea.
J Nanosci Nanotechnol. 2011 Jan;11(1):301-5. doi: 10.1166/jnn.2011.3285.
To acquire the uniform resist patterns in thermal nanoimprint lithography (TH-NIL), the major considerations include control of the resist, stamp and substrate resist under the imprint condition. Examples of these factors are management of the imprinting pressure, imprinting temperature and releasing temperature. Non-uniform patterns of thermal imprinted resist appear after TH-NIL according to the pattern size, substrate size and resist thickness. Particularly, the hole-shaped patterns with a diameter of 100 nm and a height of 100 nm on a 4 inch Si wafer after TH-NIL were deformed under tension to the maximum strain 70%. The experimental results showed that uniform nano-patterns can be acquired by minimizing the thermal mismatch while nanoimprinting through using a pair of Si stamp and Si substrate, thinning the resist thickness and separating the stamp at a relatively high temperature.
为了在热纳米压印光刻（TH-NIL）中获得均匀的抗蚀剂图案，主要考虑因素包括在压印条件下对抗蚀剂、压模和衬底抗蚀剂的控制。这些因素的例子有压印压力、压印温度和脱模温度的管理。热压印抗蚀剂的图案在热纳米压印光刻之后会根据图案尺寸、衬底尺寸和抗蚀剂厚度出现不均匀的情况。特别是，在4英寸硅片上经过热纳米压印光刻后直径为100纳米、高度为100纳米的孔形图案在拉伸至最大应变70%时会发生变形。实验结果表明，通过在纳米压印过程中使用一对硅压模和硅衬底来最小化热失配、减薄抗蚀剂厚度并在相对较高的温度下分离压模，可以获得均匀的纳米图案。
