Sharstniou Aliaksandr, Niauzorau Stanislau, Junghare Ashlesha, Azeredo Bruno P
The Polytechnic School, Arizona State University.
The Polytechnic School, Arizona State University;
J Vis Exp. 2022 Feb 8(180). doi: 10.3791/61040.
Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro- and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.g., GaAs) semiconductors without the need of sacrificial templates and lithographical steps. During this process, a reusable stamp coated with a noble metal catalyst is brought in contact with a Si wafer in the presence of a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture, which leads to the selective etching of Si at the metal-semiconductor contact interface. In this protocol, we discuss the stamp and substrate preparation methods applied in two Mac-Imprint configurations: (1) Porous Si Mac-Imprint with a solid catalyst; and (2) Solid Si Mac-Imprint with a porous catalyst. This process is high throughput and is capable of centimeter-scale parallel patterning with sub-20 nm resolution. It also provides low defect density and large area patterning in a single operation and bypasses the need for dry etching such as deep reactive ion etching (DRIE).
金属辅助电化学压印（Mac-Imprint）是金属辅助化学蚀刻（MACE）与纳米压印光刻技术的结合，能够在IV族单晶（如硅）和III-V族单晶（如砷化镓）半导体中直接形成三维微米和纳米级特征图案，无需牺牲模板和光刻步骤。在此过程中，涂有贵金属催化剂的可重复使用印章在氢氟酸（HF）和过氧化氢（H2O2）混合物存在的情况下与硅片接触，这会导致硅在金属-半导体接触界面处被选择性蚀刻。在本方案中，我们讨论了应用于两种Mac-Imprint配置的印章和衬底制备方法：（1）带有固体催化剂的多孔硅Mac-Imprint；以及（2）带有多孔催化剂的固体硅Mac-Imprint。该工艺具有高通量，能够以低于20纳米的分辨率进行厘米级并行图案化。它还能在单次操作中提供低缺陷密度和大面积图案化，并且无需诸如深反应离子蚀刻（DRIE）等干法蚀刻。
