School of Metallurgy, Northeastern University, Shenyang, Liaoning 110819, People's Republic of China. Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, 213164, Jiangsu, People's Republic of China.
Nanotechnology. 2019 Jun 14;30(24):245602. doi: 10.1088/1361-6528/ab0a2d. Epub 2019 Feb 25.
Ni-Co-Se layers have attracted a great deal of attention in the field of solar cells, electrocatalyst water splitting and supercapacitors. Electrodeposition is a simple, convenient and low-cost way to obtain Ni-Co-Se layers. However, until now, the electrochemical kinetics of the Ni-Co-Se system, including its growth and nucleation mechanisms, are still unclear. In present work a NiCoSe layer with a nanosheet structure was electrodeposited in a chloride bath. The electrochemical mechanisms of the Ni-Co-Se system were also studied. It is noted that the electrochemical kinetics of Ni-Co-Se electrodeposition can be influenced by both temperature and electrode material; however, temperature does not change the progressive nucleation process and mixed controlled growth mechanism of Ni-Co-Se. The diffusion coefficient D and charge-transfer coefficient α of the Ni-Co-Se system were calculated. The values of D obtained by cyclic voltammogram and chromoamperometry are close to each other at both 20 and 50 °C, respectively, and increase with the increase of temperature. Moreover, the activation energy E was also calculated. Specially, a uniform 3D network-structure NiCoSe layer was electrodeposited on ITO glass at -0.9 V and 40 ∼ 60 °C. The increased overpotential during deposition makes the NiCoSe layer more easily gather together; however, there is no significant effect on the surface morphology of the NiCoSe layer when the temperature is between 40 and 60 °C.
镍钴硒层在太阳能电池、电催化水分解和超级电容器领域引起了极大的关注。电沉积是获得镍钴硒层的一种简单、方便且低成本的方法。然而，直到现在，镍钴硒体系的电化学动力学，包括其生长和成核机制，仍然不清楚。在本工作中，在氯化物浴中电沉积了具有纳米片结构的 NiCoSe 层。还研究了 Ni-Co-Se 体系的电化学机制。值得注意的是，Ni-Co-Se 电沉积的电化学动力学可以受到温度和电极材料的影响；然而，温度不会改变 Ni-Co-Se 的逐步成核过程和混合控制生长机制。计算了 Ni-Co-Se 体系的扩散系数 D 和电荷转移系数α。在 20 和 50°C 下，循环伏安法和计时电流法得到的 D 值彼此接近，并且随着温度的升高而增加。此外，还计算了活化能 E。特别地，在-0.9 V 和 40-60°C 下，在 ITO 玻璃上电沉积了均匀的 3D 网络结构 NiCoSe 层。沉积过程中过电位的增加使得 NiCoSe 层更容易聚集在一起；然而，当温度在 40 到 60°C 之间时，对 NiCoSe 层的表面形貌没有明显影响。
