Barros Raquel, Saji Kachirayil J, Waerenborgh João C, Barquinha Pedro, Pereira Luís, Carlos Emanuel, Martins Rodrigo, Fortunato Elvira
CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal.
Hovione, Campus do Lumiar, Edifício S, Estrada do Paço do Lumiar, 1649-038 Lisboa, Portugal.
Nanomaterials (Basel). 2019 Mar 1;9(3):320. doi: 10.3390/nano9030320.
This work reports on the role of structure and composition on the determination of the performances of p-type SnO TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (O) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm² V s and on-off ratio above 7 × 10⁴, operating at the enhancement mode with a saturation voltage of -10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnO TFTs with different methods and using different device configurations.
本工作报道了结构和成分对通过射频磁控溅射在室温下沉积、随后在不同氧分压（0%至20%）下进行高达200°C的后退火步骤的底栅结构p型SnO薄膜晶体管性能测定的作用，然而仅在2.8%至3.8%的狭窄窗口内观察到p型传导。通过X射线衍射（XRD）和穆斯堡尔光谱研究评估了结构和成分的作用，这些研究能够确定用于制造饱和迁移率为4.6 cm² V s且开/关比高于7×10⁴、在增强模式下以-10 V的饱和电压工作的p型薄膜晶体管的最佳相/成分和厚度（约12 nm）。此外，还简要概述了采用不同方法和不同器件配置处理SnO薄膜晶体管的现有发展现状。
