Cai Wei, Ning Honglong, Zhu Zhennan, Wei Jinglin, Zhou Shangxiong, Yao Rihui, Fang Zhiqiang, Huang Xiuqi, Lu Xubing, Peng Junbiao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China.
State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China.
Nanoscale Res Lett. 2019 Mar 5;14(1):80. doi: 10.1186/s11671-019-2905-2.
In this work, a low leakage current ZrO was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO were prepared to investigate the film formation process and electrical performance for different process. Homogeneous ZrO films were observed through the high-resolution TEM images. The chemical structure of ZrO films were investigated by XPS measurements. The inkjet-printed ZrO layer upon IGZO showed a superior performance on mobility and off state current, but a large V shift under positive bias stress. As a result, the TFT device based on inkjet-printed ZrO exhibited a saturation mobility of 12.4 cm/Vs, an I/I ratio of 10, a turn on voltage of 0 V and a 1.4-V V shift after 1-h PBS strain. Higher density films with less oxygen vacancy were responsible for low off state current for the printed ZrO device. The mechanism of deteriorated performance on PBS test can be ascribed to the In-rich region formed at the back channel which easily absorbs HO and oxygen. The absorbed HO and oxygen capture electrons under positive bias stress, serving as acceptors in TFT device. This work demonstrates the film formation process of direct inkjet-printed and spin-coated oxide films and reveals the potential of direct inkjet-printed oxide dielectric in high-performance oxide TFT device.
在这项工作中，使用直接喷墨印刷技术制备了用于溅射铟镓锌氧化物（IGZO）薄膜晶体管的低漏电流ZrO。制备了旋涂和直接喷墨印刷的ZrO，以研究不同工艺下的成膜过程和电学性能。通过高分辨率透射电子显微镜图像观察到均匀的ZrO薄膜。通过XPS测量研究了ZrO薄膜的化学结构。IGZO上喷墨印刷的ZrO层在迁移率和关态电流方面表现出优异的性能，但在正偏压应力下有较大的V偏移。结果，基于喷墨印刷ZrO的TFT器件在1小时PBS应变后表现出12.4 cm²/Vs的饱和迁移率、10的Ion/Ioff比、0 V的开启电压和1.4 V的V偏移。具有较少氧空位的更高密度薄膜是印刷ZrO器件低关态电流的原因。PBS测试中性能劣化的机制可归因于在背沟道形成的富铟区域，该区域容易吸收HO和氧。在正偏压应力下，吸收的HO和氧捕获电子，在TFT器件中充当受主。这项工作展示了直接喷墨印刷和旋涂氧化物薄膜的成膜过程，并揭示了直接喷墨印刷氧化物电介质在高性能氧化物TFT器件中的潜力。
