Cornell University, Ithaca, New York 14850, USA.
Kavli Institute at Cornell, Ithaca, New York 14853, USA.
Phys Rev Lett. 2019 Feb 22;122(7):077201. doi: 10.1103/PhysRevLett.122.077201.
Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy-metal (HM)-ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the ISOC at HM/FM interfaces is the dominant mechanism for "spin memory loss". An increase in ISOC significantly reduces, in a linear manner, the dampinglike spin-orbit torque (SOT) exerted on the FM layer via degradation of the spin transparency of the interface for spin currents generated in the HM. In addition, the fieldlike SOT is also dominated by the spin Hall contribution of the HM and decreases with increasing ISOC. This work reveals that ISOC at HM/FM interfaces should be minimized to advance efficient SOT devices through atomic layer passivation of the HM/FM interface or other means.
尽管已经做出了巨大的努力,但界面自旋轨道耦合(ISOC)是否以及如何影响重金属(HM)-铁磁体(FM)界面的自旋输运仍然没有得到解决。在这里,我们报告了确凿的实验证据,证明 HM/FM 界面处的 ISOC 是“自旋记忆损耗”的主要机制。ISOC 的增加以线性方式显著降低了通过 HM 中产生的自旋电流在界面处的自旋透明性的退化施加在 FM 层上的类似阻尼的自旋轨道扭矩(SOT)。此外,类场 SOT 也主要由 HM 的自旋霍尔贡献决定,并随着 ISOC 的增加而减小。这项工作表明,HM/FM 界面处的 ISOC 应最小化,通过 HM/FM 界面的原子层钝化或其他方法来推进高效的 SOT 器件。