Zhu Lijun, Liu Qianbiao, Wang Xiangrong
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Natl Sci Rev. 2025 Jun 11;12(8):nwaf240. doi: 10.1093/nsr/nwaf240. eCollection 2025 Aug.
The discovery of unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to the magnetization-dependent interfacial reflection of the spin current, has had a remarkable impact on the understanding and application of a variety of spintronics phenomena. Here, we report that giant UMR occurs also in single-layer magnetic metals and exhibits high-order contributions and a universal sum rule, which agree well with the physics origin of the recently proposed two-vector magnetoresistance that simply considers electron scattering by the magnetization vector and interfacial electric field, without the need for any relevance to the spin/orbital current or crystalline symmetry. Revisiting of the literature data reveals that the most representative data that were used to claim spin Hall magnetoresistance or other magnetoresistances related or unrelated to spin current can be understood unifiedly by using the two-vector MR theory. Experimental and theoretical results against spin-current-related magnetoresistances, but not two-vector magnetoresistance, are discussed.
在垂直于电流的平面内磁化旋转过程中发现的异常磁电阻（UMR），通常归因于自旋电流的磁化依赖界面反射，这对各种自旋电子学现象的理解和应用产生了显著影响。在此，我们报告单层磁性金属中也会出现巨大的UMR，并且呈现高阶贡献和通用求和规则，这与最近提出的双矢量磁电阻的物理起源非常吻合，该理论仅考虑电子被磁化矢量和界面电场散射，而无需与自旋/轨道电流或晶体对称性有任何关联。对文献数据的重新审视表明，用于声称自旋霍尔磁电阻或其他与自旋电流相关或不相关的磁电阻的最具代表性的数据，可以通过双矢量MR理论统一理解。讨论了与自旋电流相关的磁电阻而非双矢量磁电阻的实验和理论结果。
