Kim Kyoung-Whan, Lee Kyung-Jin, Sinova Jairo, Lee Hyun-Woo, Stiles M D
Institut für Physik, Johannes Gutenberg Universität Mainz, Mainz 55128, Germany.
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Phys Rev B. 2017 Sep;96(10). doi: 10.1103/PhysRevB.96.104438. Epub 2017 Sep 26.
We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.
我们采用微扰方法,通过在界面附近电子输运的全三维描述中处理二维 Rashba 模型,来研究磁性多层膜中界面自旋 - 轨道耦合的效应。这种形式体系根据未受微扰的散射系数,为电流诱导的自旋 - 轨道转矩提供了一个紧凑的解析表达式,通过简单地将散射系数代入公式,就能计算各种情况下的自旋 - 轨道转矩。它适用于具有体磁性的磁性双层膜、具有界面磁性的磁性双层膜、正常金属/铁磁绝缘体结以及拓扑绝缘体/铁磁体结的自旋 - 轨道转矩计算。它预测了自旋 - 轨道转矩的一个类似阻尼的分量,该分量不同于任何本征贡献或由特定自旋弛豫机制产生的贡献。我们讨论了近邻诱导磁性和插入额外层的影响,并以相同的形式体系给出了由垂直偏置、各向异性磁电阻和自旋记忆损失引起的面内电流的公式。