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基于拓扑空位的单壁碳纳米管与人线粒体电压依赖性阴离子通道(hVDAC1)的计算分子靶标扫描。

Computational MitoTarget Scanning Based on Topological Vacancies of Single-Walled Carbon Nanotubes with the Human Mitochondrial Voltage-Dependent Anion Channel (hVDAC1).

机构信息

Department of Chemistry and Biochemistry, Faculty of Science , University of Porto , 4169-007 Porto , Portugal.

Institute of Biological Sciences (ICB) , Universidade Federal do Rio Grande (FURG) , 96270-900 Rio Grande , RS , Brazil.

出版信息

Chem Res Toxicol. 2019 Apr 15;32(4):566-577. doi: 10.1021/acs.chemrestox.8b00266. Epub 2019 Mar 26.

Abstract

We present an in silico approach for modeling the noncovalent interactions between the human mitochondrial voltage-dependent anion channel (hVDAC1) and a family of single-walled carbon nanotubes (SWCNTs) with a defined pattern of topological vacancies ( v = 1-16), obtained by removing atoms from the SWCNT surface. The general results showed more stable docking interaction complexes (SWCNT-hVDAC1), with more negative Gibbs free energy of binding affinity values, and a strong dependence on the vacancy number ( R = 0.93) and vacancy formation energy ( R = 0.96). In addition, for most of the SWCNT vacancies that were analyzed, the interatomic distances for the interactions of the SWCNT-hVDAC1 complex with the functional catalytic residues (i.e., Pro7, Gln199, Gln182, Phe181, Val20, Asp19, Lys15, Gly14, Asp12, Ala11, and Arg18) that form the hVDAC1 active site (i.e., the voltage-sensing N-terminal α-helix segment) were very similar to or shorter than the interatomic distances of these residues for ATP-hVDAC1 interactions. In particular, the hVDAC1 residues that can be phosphorylated like Tyr10, Tyr198, and Se16 were significantly perturbed by the interactions with SWCNT with at least nine vacancies. In addition, the SWCNT vacancy family members can affect the flexibility properties of the hVDAC1 N-terminal α-helix segment inducing different patterns of local perturbations in inter-residue communication. Finally, vacancy quantitative structure-binding relationships (V-QSBRs) were unveiled for setting up a robust model that can predict the strength of docking interactions between SWCNTs with a specific topological vacancy and hVDAC1. The developed V-QSBR model classified properly all of the SWCNTs with a different number of SWCNT vacancies with exceptional sensitivity and specificity (both equal to 100%), indicating a strong potential to unequivocally predict the influence of SWCNT vacancies on the mitochondrial channel interactions.

摘要

我们提出了一种计算方法,用于模拟人线粒体电压依赖性阴离子通道(hVDAC1)与具有特定拓扑空位(v=1-16)模式的单壁碳纳米管(SWCNT)之间的非共价相互作用。通过从 SWCNT 表面去除原子获得 SWCNT 空位。一般结果表明,具有更多负结合亲和力吉布斯自由能值的更稳定对接相互作用复合物(SWCNT-hVDAC1),并且对空位数量(R=0.93)和空位形成能(R=0.96)有很强的依赖性。此外,对于大多数分析的 SWCNT 空位,SWCNT-hVDAC1 复合物与形成 hVDAC1 活性位点(即电压感应 N 端α-螺旋段)的功能催化残基(即 Pro7、Gln199、Gln182、Phe181、Val20、Asp19、Lys15、Gly14、Asp12、Ala11 和 Arg18)的相互作用的原子间距离非常相似或短于这些残基与 ATP-hVDAC1 相互作用的原子间距离。特别是,像 Tyr10、Tyr198 和 Se16 这样可以磷酸化的 hVDAC1 残基,与至少有九个空位的 SWCNT 相互作用时会受到明显干扰。此外,SWCNT 空位家族成员可以影响 hVDAC1 N 端α-螺旋段的柔性性质,从而在残基间通讯中引起不同模式的局部干扰。最后,揭示了空位定量结构结合关系(V-QSBR),以建立一个稳健的模型,可以预测具有特定拓扑空位的 SWCNT 与 hVDAC1 之间的对接相互作用强度。开发的 V-QSBR 模型正确分类了所有具有不同 SWCNT 空位数量的 SWCNT,具有出色的灵敏度和特异性(均为 100%),这表明它具有很强的潜力,可以明确预测 SWCNT 空位对线粒体通道相互作用的影响。

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