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钾离子插层在更高温度下稳定 1T-二硫化钽中的同成分电荷密度波。

Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation.

机构信息

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.

出版信息

Nanoscale. 2019 Mar 28;11(13):6016-6022. doi: 10.1039/c8nr09732a.

Abstract

The 1T phase of tantalum disulfide (1T-TaS2) possesses a variety of charge-density-wave (CDW) orders, and as a result, it attracts an increasing amount of academic and technological interest. Researchers have devoted tremendous efforts towards understanding the impacts of doping, alloying, intercalation or other triggering agents on its charge density wave orders. In this work, we demonstrate that incorporating potassium chloride (KCl) during chemical vapor deposition (CVD) of TaS2 can control the phase (1T, 2H or metal nanowires) via the intercalation of potassium ions (K+) between TaS2 layers. Finally, we demonstrate that K+ not only impacts the structure during synthesis but also strongly impacts the CDW phase transition as a function of temperature, increasing the nearly commensurate (NCCDW) to commensurate (CCDW) transition to just below room temperature.

摘要

二硫化钽的 1T 相具有多种电荷密度波(CDW)有序态,因此引起了越来越多的学术和技术关注。研究人员投入了大量精力来理解掺杂、合金化、插层或其他触发剂对其电荷密度波有序态的影响。在这项工作中,我们证明了在 TaS2 的化学气相沉积(CVD)过程中加入氯化钾(KCl)可以通过钾离子(K+)在 TaS2 层之间的插层来控制相(1T、2H 或金属纳米线)。最后,我们证明 K+不仅在合成过程中影响结构,而且还强烈影响作为温度函数的 CDW 相变,将近乎完全协调(NCCDW)到完全协调(CCDW)的转变提高到接近室温。

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