UNESP-São Paulo State University , School of Technology and Sciences , 19060-900 Presidente Prudente , Brazil.
School of Electronic Engineering , Bangor University , LL57 2DG Bangor , Gwynedd , Wales, U.K.
ACS Comb Sci. 2019 May 13;21(5):370-379. doi: 10.1021/acscombsci.8b00195. Epub 2019 Mar 28.
The present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (AlO) dielectric films for zinc oxide thin-film transistors (TFTs). Fourteen performance parameters were measured and analysis of variance (ANOVA) of the combined responses has been applied to identify how the AlO dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodization process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this "multivariate" approach could be adopted more widely by the industry to improve the reliability and performance of such devices.
本研究报告了一种两级多元分析，旨在优化用于氧化锌薄膜晶体管（TFT）的阳极氧化铝（AlO）介电薄膜的生产。测量了 14 个性能参数，并应用方差分析（ANOVA）对综合响应进行了分析，以确定 AlO 介电层制造工艺如何影响 TFT 的电性能。通过这种方法，确定了达到最佳整体器件性能的制造因素水平，并对其进行了排名。对 TFT 性能参数的交叉检查分析表明，适当控制阳极氧化工艺对 TFT 性能的影响可能高于传统的介电层表面处理方法。预计未来 10 年，柔性电子应用将大幅增长。鉴于新的柔性电子元件的复杂性和挑战，这种“多元”方法可能会被业界更广泛地采用，以提高此类器件的可靠性和性能。
