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开尔文探针力显微镜探测光照方向对CHNHPbI钙钛矿薄膜表面电势的影响

Effects of Illumination Direction on the Surface Potential of CHNHPbI Perovskite Films Probed by Kelvin Probe Force Microscopy.

作者信息

Yang Chao, Du Peng, Dai Zhensheng, Li Huiqin, Yang Xudong, Chen Qianli

机构信息

University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University , Shanghai 200240 , China.

出版信息

ACS Appl Mater Interfaces. 2019 Apr 17;11(15):14044-14050. doi: 10.1021/acsami.8b21774. Epub 2019 Apr 8.

Abstract

The development of organic-inorganic hybrid perovskite solar cells requires critical understanding in the charge-carrier behaviors in the perovskite light absorbers and devices. Kelvin probe force microscopy (KPFM) has been applied as a powerful tool to probe the electrical potential distribution of perovskite films and devices, providing fundamental insights into their charge-carrier properties. When measuring the material photoresponses, various approaches have been employed to illuminate the samples. Here, we measured the surface potential of the layer in the regular mesoporous structure (CHNHPbI/m-TiO/c-TiO/FTO) and inverted planar structure (CHNHPbI/NiO/FTO) devices via KPFM. Effects of two representative illumination methods are compared-illumination from top, and from underneath through the transparent glass substrate. By comparing the variation in surface potential under two illumination methods, the surface potential of the perovskite-absorbing layer in a regular structure is higher than that in the inverted structure. The potential difference in two structures implies that the photogenerated charge carriers are injected to the TiO electron-transport layer and NiO hole-transport layer, resulting in positive charges and negative charges accumulated in the perovskite-absorbing layer. We demonstrated that the illumination direction has an impact on the surface potential measurement. For the CHNHPbI/TiO structure, illumination from underneath facilitates a larger potential change. While for the CHNHPbI/NiO structure with insensitive photoresponse in potential change, the illumination direction has a minor effect.

摘要

有机-无机杂化钙钛矿太阳能电池的发展需要深入了解钙钛矿光吸收层和器件中的电荷载流子行为。开尔文探针力显微镜(KPFM)已被用作探测钙钛矿薄膜和器件电势分布的有力工具,为其电荷载流子特性提供了基本见解。在测量材料的光响应时,已采用各种方法来照射样品。在此,我们通过KPFM测量了常规介孔结构(CHNHPbI/m-TiO/c-TiO/FTO)和倒置平面结构(CHNHPbI/NiO/FTO)器件中各层的表面电势。比较了两种代表性照射方法的效果——从顶部照射和透过透明玻璃基板从底部照射。通过比较两种照射方法下表面电势的变化,常规结构中钙钛矿吸收层的表面电势高于倒置结构中的表面电势。两种结构中的电势差意味着光生电荷载流子被注入到TiO电子传输层和NiO空穴传输层,导致钙钛矿吸收层中积累正电荷和负电荷。我们证明了照射方向对表面电势测量有影响。对于CHNHPbI/TiO结构,从底部照射会促进更大的电势变化。而对于电势变化中光响应不敏感的CHNHPbI/NiO结构,照射方向的影响较小。

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