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通过调控缺陷提高效率的Zn-Ag-In-S量子点敏化太阳能电池

Zn-Ag-In-S quantum dot sensitized solar cells with enhanced efficiency by tuning defects.

作者信息

Zhang Hua, Fang Wenjuan, Zhong Yuanyuan, Zhao Qingfei

机构信息

Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China.

Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China.

出版信息

J Colloid Interface Sci. 2019 Jul 1;547:267-274. doi: 10.1016/j.jcis.2019.04.006. Epub 2019 Apr 4.

DOI:10.1016/j.jcis.2019.04.006
PMID:30954770
Abstract

Being an important I-III-VI green quantum dot (QD), AgInS (AIS) has been used as sensitizers for QD sensitized solar cells (QDSCs) but with low power conversion efficiency (PCE). Herein, we have used oleylamine as surfactant to synthesize AIS and quaternary Zn-Ag-In-S (ZAIS) QDs via a facile and green method. The assembled AIS QDSCs show high PCE of 2.46%. After doping with Zn to form ZAIS QDs, the defect states have been modified, resulting in the enhanced photoluminescence. The assembled ZAIS QDSCs receive the greatly enhanced PCE of 4.50% with dramatically increased current density. Various characterizations verify that the high quality of QDs, large recombination resistance at QD/electrolyte interface, high photon to electron conversion efficiency and longer electron life are contributed by the tuned intrinsic defects which are strongly related with synthesis and composition, finally leading to the high performance of photovoltaic devices.

摘要

作为一种重要的I-III-VI族绿色量子点(QD),AgInS(AIS)已被用作量子点敏化太阳能电池(QDSC)的敏化剂,但功率转换效率(PCE)较低。在此,我们使用油胺作为表面活性剂,通过一种简便绿色的方法合成了AIS和四元Zn-Ag-In-S(ZAIS)量子点。组装的AIS量子点敏化太阳能电池显示出2.46%的高功率转换效率。在用Zn掺杂形成ZAIS量子点后,缺陷态得到了修饰,导致光致发光增强。组装的ZAIS量子点敏化太阳能电池的功率转换效率大幅提高至4.50%,电流密度显著增加。各种表征证实,高质量的量子点、量子点/电解质界面处较大的复合电阻、高的光子到电子转换效率和更长的电子寿命是由与合成和组成密切相关的固有缺陷的调控所导致的,最终实现了光电器件的高性能。

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