采用等离子体辅助分子束外延生长的隧道结的分布反馈蓝光激光二极管。

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy.

作者信息

Muziol G, Hajdel M, Turski H, Nomoto K, Siekacz M, Nowakowski-Szkudlarek K, Żak M, Jena D, Xing H G, Perlin P, Skierbiszewski C

出版信息

Opt Express. 2020 Nov 9;28(23):35321-35329. doi: 10.1364/OE.405994.

DOI:10.1364/OE.405994

PMID:33182980

Abstract

In this paper, we demonstrate a novel approach utilizing tunnel junction (TJ) to realize GaN-based distributed feedback (DFB) laser diodes (LDs). Thanks to the use of the TJ the top metal contact is moved to the side of the ridge and the DFB grating is placed directly on top of the ridge. The high refractive index contrast between air and GaN, together with the high overlap of optical mode with the grating, provides a high coupling coefficient. The demonstrated DFB LD operates at λ=450.15 nm with a side mode suppression ratio higher than 35dB. The results are compared to a standard Fabry-Perot LD.

摘要

在本文中，我们展示了一种利用隧道结（TJ）来实现基于氮化镓（GaN）的分布反馈（DFB）激光二极管（LDs）的新颖方法。由于采用了隧道结，顶部金属接触被移到了脊的侧面，并且分布反馈光栅直接放置在脊的顶部。空气与氮化镓之间的高折射率对比度，以及光模式与光栅的高重叠度，提供了高耦合系数。所展示的分布反馈激光二极管在波长λ = 450.15 nm下工作，边模抑制比高于35 dB。将结果与标准法布里 - 珀罗激光二极管进行了比较。