Bafekry Asadollah, Ghergherehchi Mitra, Farjami Shayesteh Saber
Department of Physics, University of Guilan, 41335-1914, Rasht, Iran.
College of Electronic and Electrical Engineering, Sungkyun kwan University, Suwon, Korea.
Phys Chem Chem Phys. 2019 May 28;21(20):10552-10566. doi: 10.1039/c9cp01378d. Epub 2019 May 10.
Defects are inevitably present in materials, and their existence in a material strongly affects its fundamental physical properties. We have systematically investigated the effects of surface adsorption, substitutional impurities, defect engineering, an electric field and strain engineering on the structural, electronic and magnetic properties of antimonene nanosheets, using spin-polarized density functional calculations based on first-principles. The adsorption or substitution of atoms can locally modify the atomic and electronic structures as well as induce a variety of electronic behaviors including metal, half-metal, ferromagnetic metal, dilute magnetic semiconductor and spin-glass semiconductor. Our calculations show that the presence of typical defects (vacancies and Stone-Wales defect) in antimonene affects the geometrical symmetry as well as the band gap in the electronic band structure and induces magnetism to antimonene. Moreover, by applying an external electric field and strain (uniaxial and biaxial), the electronic structure of antimonene can be easily modified. The calculation results presented in this paper provide a fundamental insight into the tunable nature of the electronic properties of antimonene, supporting its promise for use in future applications.
材料中不可避免地存在缺陷,这些缺陷的存在会强烈影响材料的基本物理性质。我们基于第一性原理,使用自旋极化密度泛函计算方法,系统地研究了表面吸附、替代杂质、缺陷工程、电场和应变工程对锑烯纳米片结构、电子和磁性性质的影响。原子的吸附或替代可以局部改变原子和电子结构,并引发包括金属、半金属、铁磁金属、稀磁半导体和自旋玻璃半导体在内的各种电子行为。我们的计算表明,锑烯中典型缺陷(空位和斯通-威尔士缺陷)的存在会影响几何对称性以及电子能带结构中的带隙,并使锑烯产生磁性。此外,通过施加外部电场和应变(单轴和双轴),可以轻松改变锑烯的电子结构。本文给出的计算结果为深入了解锑烯电子性质的可调性提供了基础认识,支持了其在未来应用中的潜力。