Lungu Jeanina, Socol Gabriel, Stan George E, Ştefan Nicolaie, Luculescu Cătălin, Georgescu Adrian, Popescu-Pelin Gianina, Prodan Gabriel, Gîrţu Mihai A, Mihăilescu Ion N
Department of Physics, Ovidius University of Constanța, Constanța 900527, Romania.
National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG-36, Măgurele 077125, Romania.
Nanomaterials (Basel). 2019 May 15;9(5):746. doi: 10.3390/nano9050746.
We report on the fabrication of dye-sensitized solar cells with a TiO buffer layer between the transparent conductive oxide substrate and the mesoporous TiO film, in order to improve the photovoltaic conversion efficiency of the device. The buffer layer was fabricated by pulsed laser deposition whereas the mesoporous film by the doctor blade method, using TiO paste obtained by the sol-gel technique. The buffer layer was deposited in either oxygen (10 Pa and 50 Pa) or argon (10 Pa and 50 Pa) onto transparent conducting oxide glass kept at room temperature. The cross-section scanning electron microscopy image showed differences in layer morphology and thickness, depending on the deposition conditions. Transmission electron microscopy studies of the TiO buffer layers indicated that films consisted of grains with typical diameters of 10 nm to 30 nm. We found that the photovoltaic conversion efficiencies, determined under standard air mass 1.5 global (AM 1.5G) conditions, of the solar cells with a buffer layer are more than two times larger than those of the standard cells. The best performance was reached for buffer layers deposited at 10 Pa O. We discuss the processes that take place in the device and emphasize the role of the brush-like buffer layer in the performance increase.
我们报道了在透明导电氧化物衬底和介孔TiO₂薄膜之间制备具有TiO缓冲层的染料敏化太阳能电池，以提高该器件的光电转换效率。缓冲层通过脉冲激光沉积制备，而介孔薄膜则通过刮刀法制备，使用通过溶胶-凝胶技术获得的TiO₂浆料。缓冲层在氧气（10 Pa和50 Pa）或氩气（10 Pa和50 Pa）中沉积到保持在室温的透明导电氧化物玻璃上。横截面扫描电子显微镜图像显示，根据沉积条件，层的形态和厚度存在差异。对TiO缓冲层的透射电子显微镜研究表明，薄膜由典型直径为10 nm至30 nm的晶粒组成。我们发现，在标准空气质量1.5全球（AM 1.5G）条件下测定的具有缓冲层的太阳能电池的光电转换效率比标准电池高出两倍以上。在10 Pa O₂下沉积的缓冲层达到了最佳性能。我们讨论了器件中发生的过程，并强调了刷状缓冲层在性能提升中的作用。
