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利用混合TES-ADT/PbS量子点系统实现超越晶体硅带隙能量的光子上转换。

Photon upconversion utilizing energy beyond the band gap of crystalline silicon with a hybrid TES-ADT/PbS quantum dots system.

作者信息

Nishimura Naoyuki, Allardice Jesse R, Xiao James, Gu Qifei, Gray Victor, Rao Akshay

机构信息

Cavendish Laboratory , University of Cambridge , J. J. Thomson Avenue , Cambridge , CB3 0HE , UK . Email:

Corporate Research & Development , Asahi-Kasei Corporation , 2-1 Samejima, Fuji , Shizuoka , 416-8501 , Japan.

出版信息

Chem Sci. 2019 Mar 27;10(18):4750-4760. doi: 10.1039/c9sc00821g. eCollection 2019 May 14.

Abstract

The recent introduction of inorganic semiconductor quantum dots (QDs) as triplet sensitizers for molecular semiconductors has led to significant interest in harvesting low energy photons, which can then be used for photon upconversion (PUC), triplet-triplet annihilation (TTA). A key goal is the harvesting of photons from below the bandgap of crystalline silicon 1.12 eV (≈1100 nm) and their upconversion into the visible region. In practice, the systems demonstrated so far have been limited to harvesting photons with energies above 1.2 eV (≈1 μm), due to two reasons: firstly the need to use transmitter ligands which allow efficient energy harvesting from the QD but introduce an energy loss of larger than 200 meV in transmission from the QD to the annihilator, and secondly due to the use of molecules such as tetracene which cannot accept smaller energy than 1.2 eV. Here, we introduce a new strategy to overcome these difficulties by using a low energy triplet annihilator that also harvests excitations efficiently from QDs. Specifically, we show that 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT, triplet energy of 1.08 eV: 1150 nm) functions as a triplet annihilator (20% TTA efficiency) while also rapidly extracting triplet excitons from lead sulfide (PbS) QDs with a rate constant of = 2 × 10 s with an excitation at 1064 nm. This rate is consistent with an orbital overlap between TES-ADT and PbS QDs, which we propose is due to the thiophene group of TES-ADT, which enables a close association with the PbS surface, allowing this system to function both as annihilator and transmitter. Our results pave the way for the design of triplet annihilators that can closely associate with the QD surface and harvest low energy excitons with minute losses in energy during the TET process, with the ultimate goal of efficiently utilizing photon energy beyond the bandgap of crystalline silicon.

摘要

最近,无机半导体量子点(QDs)作为分子半导体的三线态敏化剂被引入,这引发了人们对收集低能光子的极大兴趣,这些光子随后可用于光子上转换(PUC)、三线态-三线态湮灭(TTA)。一个关键目标是收集来自晶体硅带隙以下1.12 eV(≈1100 nm)的光子,并将其向上转换到可见光区域。实际上,由于两个原因,到目前为止所展示的系统仅限于收集能量高于1.2 eV(≈1μm)的光子:首先,需要使用能够从量子点高效收集能量但在从量子点传输到湮灭剂的过程中引入大于200 meV能量损失的传输配体;其次,由于使用了诸如并四苯之类的分子,其不能接受小于1.2 eV的能量。在此,我们引入一种新策略来克服这些困难,即使用一种低能三线态湮灭剂,它还能有效地从量子点收集激发能。具体而言,我们表明5,11-双(三乙基硅乙炔基)蒽二噻吩(TES-ADT,三线态能量为1.08 eV:1150 nm)作为三线态湮灭剂(TTA效率为20%),同时还能以速率常数 = 2×10⁸ s⁻¹从硫化铅(PbS)量子点快速提取三线态激子,激发波长为1064 nm。该速率与TES-ADT和PbS量子点之间的轨道重叠一致,我们认为这是由于TES-ADT的噻吩基团,它能够与PbS表面紧密结合,使该系统既能作为湮灭剂又能作为传输体发挥作用。我们的结果为设计能够与量子点表面紧密结合并在TET过程中以微小能量损失收集低能激子的三线态湮灭剂铺平了道路,最终目标是有效利用超出晶体硅带隙的光子能量。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a933/6510314/731faa027493/c9sc00821g-f1.jpg

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