Department of Nanosclae Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.
Nanotechnology. 2019 Oct 4;30(40):405707. doi: 10.1088/1361-6528/ab2d89. Epub 2019 Jun 27.
In this work, we report on the layered deposition of few-layer tin disulfide (SnS) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS film (3-6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS as the transport channel. SnS devices showed typical n-type characteristic with on/off current ratio of ∼8.32 × 10, threshold voltage of ∼2 V, and a subthreshold swing value of 830 mV decade for the 6 layers SnS. The developed SnS ALD technique may aid the realization of two-dimensional SnS based flexible and wearable devices.
在这项工作中，我们报告了使用原子层沉积（ALD）进行的少层二硫化锡（SnS）的分层沉积。通过改变 ALD 循环次数，可以沉积具有层数变化较小的多晶 SnS。基于 ALD 技术，我们开发了生长少层晶态 SnS 薄膜（3-6 层）的工艺技术，并通过使用 ALD SnS 作为传输通道来制造底栅薄膜晶体管来研究其电学性能。SnS 器件表现出典型的 n 型特性，对于 6 层 SnS，开关电流比约为 8.32×10，阈值电压约为 2V，亚阈值摆幅值为 830mV 个 decade。所开发的 SnS ALD 技术可能有助于实现基于二维 SnS 的柔性可穿戴设备。
