Sosada-Ludwikowska Florentyna, Wimmer-Teubenbacher Robert, Sagmeister Martin, Köck Anton
Microelectronics, Materials Center Leoben Forschung GmbH, 8700 Leoben, Austria.
ams AG, 8141 Premstätten, Austria.
Sensors (Basel). 2019 Jul 10;19(14):3049. doi: 10.3390/s19143049.
Metal oxide multi-nanowire-based chemical gas sensors were manufactured by a fast and simple transfer printing technology. A two-step method employing spray pyrolysis deposition and a thermal annealing process was used for SnO 2 nanowires fabrication. A polydimethylsiloxane stamp was used to transfer the SnO 2 nanowires on two different gas sensing devices-Si-based substrates and microhotplate-based platform chips. Both contained a metallic inter-digital electrode structure (IDES), on which the SnO 2 nanowires were transferred for realization of multi-NW gas sensor devices. The gas sensor devices show a very high response towards H 2 S down to the 10 ppb range. Furthermore, a good response towards CO has been achieved, where in particular the microhotplate-based devices exhibit almost no cross sensitivity to humidity.
基于金属氧化物多纳米线的化学气体传感器是通过一种快速且简单的转移印刷技术制造的。采用喷雾热解沉积和热退火工艺的两步法用于制造SnO₂纳米线。使用聚二甲基硅氧烷印章将SnO₂纳米线转移到两种不同的气体传感装置——硅基衬底和基于微热板的平台芯片上。两者都包含金属叉指电极结构（IDES），在其上转移SnO₂纳米线以实现多纳米线气体传感器装置。该气体传感器装置对低至10 ppb范围的H₂S显示出非常高的响应。此外，对CO也取得了良好的响应，特别是基于微热板的装置对湿度几乎没有交叉敏感性。
