Ravnik Jan, Vaskivskyi Igor, Gerasimenko Yaroslav, Diego Michele, Vodeb Jaka, Kabanov Viktor, Mihailovic Dragan D
Complex Matter Department, Jozef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia.
Center of Excellence on Nanoscience and Nanotechnology - Nanocenter (CENN Nanocenter), Jamova 39, SI-1000 Ljubljana, Slovenia.
ACS Appl Nano Mater. 2019 Jun 28;2(6):3743-3751. doi: 10.1021/acsanm.9b00644. Epub 2019 May 28.
The stacking of layered materials into heterostructures offers diverse possibilities for generating deformed moiré states arising from their mutual interaction. Here we report self-assembled two-dimensional nanoscale strain networks formed within a single prismatic (H) polytype monolayer of TaS created in situ on the surface of an orthorhombic 1T-TaS single crystal by a low-temperature laser-induced polytype transformation. The networks revealed by scanning tunneling microscopy (STM) take on diverse configurations at different temperatures, including extensive double stripes and a twisted 3-gonal mesh of connected 6-pronged vertices. The resulting phase diagram can be understood to be a consequence of thermally driven minimization of discommensurations between the H and 1T layers. Nontrivial dislocation defects of embedded 2- and 4-gonal structures are shown to be associated with local inhomogeneous strains. The creation of metastable heterostructures by laser quench at cryogenic temperatures in combination with STM manipulation of local strain demonstrates nanoscale control of topological defects in transition metal dichalcogenide heterostructures may be utilized in the fabrication of nanoscale electronic devices and neural networks.
将层状材料堆叠成异质结构为通过相互作用产生变形的莫尔态提供了多种可能性。在此,我们报告了通过低温激光诱导多型转变在正交1T-TaS单晶表面原位生成的单棱柱(H)多型TaS单层内形成的自组装二维纳米级应变网络。扫描隧道显微镜(STM)揭示的网络在不同温度下呈现出多种构型,包括广泛的双条纹和由相连的六叉顶点组成的扭曲三角形网格。所得相图可理解为H层和1T层之间热驱动的失配最小化的结果。嵌入的二边形和四边形结构的非平凡位错缺陷被证明与局部不均匀应变有关。通过低温下的激光淬火结合STM对局部应变的操纵来创建亚稳态异质结构,表明过渡金属二硫属化物异质结构中拓扑缺陷的纳米级控制可用于制造纳米级电子器件和神经网络。