Chen Tong, Chen Wei, Liu Lifu, Wang Yuan, Zhao Xu
Key Laboratory of Advanced Films of Hebei Province, College of Physics, Hebei Normal University, Shijiazhuang 050024, China.
Phys Chem Chem Phys. 2019 Jul 24;21(29):16047-16054. doi: 10.1039/c9cp03056e.
Magnetization modulation in oxide-based resistive random-access memories facilitates their application in multifunctional memory devices and spintronics. However, the small magnetization modulation in oxide films hinders their practical applications. In this paper, we report a significant enhancement in the magnetization modulation of ZnO films upon embedding graphene quantum dots (GQDs). The magnetization-modulation ratio is greater than 500% in the ZnO-GQD hybrid films under applied biases of only 0.23/-0.20 V. This magnetization-modulation ratio is the highest value reported to date in pure or magnetic-ion-doped metal-oxide films. Further analyses indicate that the exchange of oxygen between the GQDs and ZnO, under a reversible electric field, plays an important role in enhancing the magnetization modulation. This work provides a new direction for the application of GQDs.
基于氧化物的电阻式随机存取存储器中的磁化调制促进了它们在多功能存储器件和自旋电子学中的应用。然而，氧化物薄膜中较小的磁化调制阻碍了它们的实际应用。在本文中，我们报道了嵌入石墨烯量子点（GQDs）后ZnO薄膜的磁化调制有显著增强。在仅0.23 / -0.20 V的外加偏压下，ZnO-GQD混合薄膜中的磁化调制率大于500%。该磁化调制率是迄今为止在纯金属氧化物薄膜或磁性离子掺杂金属氧化物薄膜中报道的最高值。进一步分析表明，在可逆电场下，GQDs与ZnO之间的氧交换在增强磁化调制方面起着重要作用。这项工作为GQDs的应用提供了一个新方向。
