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烷氧基镓的结构与动态特性

Structural and Dynamic Properties of Gallium Alkoxides.

作者信息

Mears Kristian L, Bloor Leanne G, Pugh David, Aliev Abil E, Knapp Caroline E, Carmalt Claire J

机构信息

Materials Chemistry Centre, Department of Chemistry , University College London , 20 Gordon Street , London WC1H 0AJ , United Kingdom.

Molecular Sciences Research Hub , Imperial College London , 80 Wood Lane , London , W12 0BZ , United Kingdom.

出版信息

Inorg Chem. 2019 Aug 5;58(15):10346-10356. doi: 10.1021/acs.inorgchem.9b01496. Epub 2019 Jul 23.

Abstract

A comparison of chlorido-gallium functionalized alkoxides as precursors for aerosol-assisted chemical vapor deposition (AACVD) was carried out. Variable-temperature (VT)-NMR studies were used to probe the fluxional behavior of these alkoxides in solution, and hence their utility as precursors. The synthesis involved the initial isolation of the dimer [GaCl(NMe)] via a salt metathesis route from GaCl and 2 equiv of LiNMe. This dimer was then reacted with 4 equiv of HOCHCHCHNEt, resulting in the formation of Ga[μ-(OCHCHCHNEt)GaCl] (). Mass spectrometry and VT-NMR confirmed the oligomeric structure of . Tuning of the ligand properties, namely, the chain length and substituents on N, resulted in formation of the monomers [GaCl(OR)] (R = CHCHNEt, (); CHCHCHNMe, ()). VT-NMR studies, supported by density functional theory calculations, confirmed that the ligands in both and possess a hemilabile coordination to the gallium center, owing to either a shorter carbon backbone () or less steric hindrance (). Both and were selected for use as precursors for AACVD: deposition at 450 °C gave thin films of amorphous GaO, which were subsequently annealed at 1000 °C to afford crystalline GaO material. The films were fully characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible spectroscopy, and energy dispersive X-ray analysis.

摘要

对作为气溶胶辅助化学气相沉积(AACVD)前驱体的氯代镓官能化醇盐进行了比较。采用变温(VT)-核磁共振研究来探测这些醇盐在溶液中的动态行为,从而确定它们作为前驱体的效用。合成过程包括首先通过盐复分解路线从GaCl和2当量的LiNMe中分离出二聚体[GaCl(NMe)]。然后将该二聚体与4当量的HOCH₂CH₂CH₂NEt反应,生成Ga[μ-(OCH₂CH₂CH₂NEt)GaCl]( )。质谱和VT-核磁共振证实了 的低聚结构。通过调整配体性质,即N上的链长和取代基,生成了单体[GaCl(OR)](R = CH₂CH₂NEt,( );CH₂CH₂CH₂NMe,( ))。在密度泛函理论计算的支持下,VT-核磁共振研究证实,由于碳骨架较短( )或空间位阻较小( ), 和 中的配体与镓中心都具有半不稳定配位。 和 都被选作AACVD的前驱体:在450℃沉积得到非晶态Ga₂O₃薄膜,随后在1000℃退火得到结晶态Ga₂O₃材料。通过X射线衍射、X射线光电子能谱、扫描电子显微镜、紫外-可见光谱和能量色散X射线分析对薄膜进行了全面表征。

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