J波段微机电系统开关的设计与性能

Design and Performance of a J Band MEMS Switch.

作者信息

Zhang Naibo, Yan Ze, Song Ruiliang, Wang Chunting, Guo Qiuquan, Yang Jun

机构信息

The 54th Research Institute of China Electronic Science and Technology Group Corporation, Beijing 100070, China.

Beihang University, Beijing 100083, China.

出版信息

Micromachines (Basel). 2019 Jul 13;10(7):467. doi: 10.3390/mi10070467.

DOI:10.3390/mi10070467

PMID:31337033

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6681097/

Abstract

This paper presents a novel J band (220-325 GHz) MEMS switch design. The equivalent circuits, the major parameters, capacitance, inductance and resistance in the circuit were extracted and calculated quantitatively to carry out the radio frequency analysis. In addition, the mechanical property of the switch structure is analyzed, and the switching voltage is obtained. With the designed parameters, the MEMS switch is fabricated. The measurement results are in good agreement with simulation results, and the switch is actuated under a voltage of ~~30 V. More importantly, the switch has achieved a low insertion loss of ~1.2 dB at 220 GHz and <~~4 dB from 220 GHz to 270 GHz in the "UP" state, and isolation of ~16 dB from 220 GHz to 320 GHz in the "DOWN" state. Such switch shows great potential in the integration for terahertz components.

摘要

本文提出了一种新型的J波段（220 - 325GHz）微机电系统（MEMS）开关设计。提取并定量计算了等效电路、电路中的主要参数、电容、电感和电阻，以进行射频分析。此外，分析了开关结构的机械性能，并获得了开关电压。利用所设计的参数制造了MEMS开关。测量结果与模拟结果吻合良好，该开关在约30V的电压下被驱动。更重要的是，该开关在“导通”状态下于220GHz时实现了约1.2dB的低插入损耗，在220GHz至270GHz范围内小于约4dB，在“关断”状态下于220GHz至320GHz范围内实现了约16dB的隔离。这种开关在太赫兹组件集成方面显示出巨大潜力。