Lee Ah Reum, Lee Doo Won, Lee Sang Hee, Bhopal Muhammad Fahad, Kim Han Jun, Lim Kyoung-Jin, Shin Won-Suk, Lee Soo Hong, Kim Jeong
Green Strategic Energy Research Institute, Department of Electronics Engineering, Sejong University, Gwangjin-gu, Seoul, 05006, Korea.
Jusung Engineering, Gwangju-si, Gyeonggi-do, 12773, Korea.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):161-167. doi: 10.1166/jnn.2020.17242.
In this literature, we discussed the effect of anti-reflection coating of silicon heterojunction (SHJ) solar cells with different characteristics of double layered indium tin oxide (ITO/ITO) structure. Firstly, the OPAL 2 simulation was performed to optimize the values of the photo generation-current density of ITO/ITO/Si device structures. Afterwards, experimental work was conducted by depositing ITO on the SHJ solar cell to analyze the anti-reflection coating effect. ITO was deposited on the SHJ solar cell for 90 to 180 seconds by varying the oxygen flow rate. The highest short-circuit current density of 39.25 mA/cm² was obtained when ITO was deposited for 150 seconds, which was higher than the short-circuit current density of non-deposited cell of ITO (38 mA/cm²). The efficiency of the SHJ solar cell increased by about 2% after additional ITO deposition to 20.75%, which was due to the improvement of short-circuit current density by ITO deposition. The double layer ITO helped to improve the efficiency of SHJ solar cell by increasing light absorption in a silicon wafer.
在本论文中，我们讨论了具有不同双层氧化铟锡（ITO/ITO）结构特性的硅异质结（SHJ）太阳能电池减反射涂层的效果。首先，进行OPAL 2模拟以优化ITO/ITO/Si器件结构的光生电流密度值。之后，通过在SHJ太阳能电池上沉积ITO来开展实验工作，以分析减反射涂层效果。通过改变氧气流量，在SHJ太阳能电池上沉积ITO 90至180秒。当ITO沉积150秒时，获得了最高短路电流密度39.25 mA/cm²，这高于未沉积ITO的电池的短路电流密度（38 mA/cm²）。额外沉积ITO后，SHJ太阳能电池的效率提高了约2%，达到20.75%，这是由于ITO沉积提高了短路电流密度。双层ITO通过增加硅片中的光吸收，有助于提高SHJ太阳能电池的效率。
