Kim Han Jun, Lee Sang Hee, Lee DooWon, Lee Ah Reum, Lim Kyoung-Jin, Shin Won-Suk, Kim Jeong
Green Strategic Energy Research Institute, Department of Electronics Engineering, Sejong University, Gwangjin-gu, Seoul, 05006, Korea.
Jusung Engineering, Gwangju-si, Gyeongggi-do, 12773, Korea.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):245-251. doi: 10.1166/jnn.2020.17291.
Copper plating has been considered as a future metallization technique to reduce metal contact area and material cost in silicon heterojunction (SHJ) solar cells. In this paper, a Cu-Sn alloy film is used as a seed layer material on an indium tin oxide (ITO) layer with the goal to enhance contact resistivity between the seed and ITO layer. The contact resistivity between the seed layer and ITO is an important parameter because low contact resistivity is required for the high fill factor of the solar cells. In addition, it was confirmed that tin diffusion to ITO can affect contact resistivity by annealing samples having a Cu-Sn seed layer. Contact resistivity values of the samples were extracted by using transfer length method (TLM). Atomic percentage of tin in the Cu-Sn film was measured by the energy dispersive spectrometer (EDS). Also, tape tests were carried out to simply confirm the adhesion of contacts with the Cu-Sn seed layer.
镀铜已被视为一种未来的金属化技术，用于减少硅异质结（SHJ）太阳能电池中的金属接触面积和材料成本。在本文中，一种铜锡合金膜被用作氧化铟锡（ITO）层上的籽晶层材料，目的是提高籽晶层与ITO层之间的接触电阻率。籽晶层与ITO之间的接触电阻率是一个重要参数，因为太阳能电池的高填充因子需要低接触电阻率。此外，通过对具有铜锡籽晶层的样品进行退火处理，证实了锡向ITO的扩散会影响接触电阻率。通过使用转移长度法（TLM）提取样品的接触电阻率值。用能量色散谱仪（EDS）测量铜锡膜中锡的原子百分比。此外，还进行了胶带测试，以简单确认与铜锡籽晶层接触的附着力。
