• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过表面电荷转移掺杂实现二维材料的双极及n/p型传导增强

Ambipolar and n/p-type conduction enhancement of two-dimensional materials by surface charge transfer doping.

作者信息

Fan Shuangqing, Tang Xiaodong, Zhang Daihua, Hu Xiaodong, Liu Jing, Yang Lijun, Su Jie

机构信息

School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China.

出版信息

Nanoscale. 2019 Aug 15;11(32):15359-15366. doi: 10.1039/c9nr05343c.

DOI:10.1039/c9nr05343c
PMID:31386753
Abstract

The controllable and wide-range modulation of the carrier type and mobility in atomically thin two-dimensional (2D) materials is one of the most critical issues to be addressed before 2D materials can be practically used for future electronic and optoelectronic devices. In this work, we propose using a novel surface charge transfer mechanism to accomplish the controllable and wide-range modulation of the carrier type and mobility in 2D materials. Our methodology uses a solution of triphenylboron (TPB) to physically coat 2D materials; the TPB molecule contains positive and negative charge centers that are spatially separable when induced by an electrical field. Consequently, the TPB can transfer either positive or negative charges to 2D materials depending on the direction of the applied electrical field and thus enhance the ambipolar behavior of the 2D-material FET. This method is so versatile that seven types of 2D materials including graphene, black phosphorus and five transition metal dichalcogenides (TMDCs) can be modulated to strong ambipolar behavior with significantly increased conduction. In addition, selectively suppressing or enhancing the negative charge center enables solely p-type and n-type doping. We also accomplish the precise tuning of carrier mobility in TMDCs from ambipolar to p-type by coating a mixture of TPB/BCF in certain concentration ratios.

摘要

在二维材料能够实际应用于未来的电子和光电器件之前,实现原子级薄的二维(2D)材料中载流子类型和迁移率的可控且宽范围调制是最关键的问题之一。在这项工作中,我们提出使用一种新型的表面电荷转移机制来实现二维材料中载流子类型和迁移率的可控且宽范围调制。我们的方法是使用三苯基硼(TPB)溶液对二维材料进行物理包覆;TPB分子包含正电荷中心和负电荷中心,在电场诱导下,它们在空间上是可分离的。因此,根据施加电场的方向,TPB可以将正电荷或负电荷转移到二维材料上,从而增强二维材料场效应晶体管的双极性行为。这种方法非常通用,包括石墨烯、黑磷和五种过渡金属二硫属化物(TMDCs)在内的七种二维材料都可以被调制为具有显著增强导电性的强双极性行为。此外,选择性地抑制或增强负电荷中心能够实现单一的p型和n型掺杂。我们还通过以特定浓度比例包覆TPB/BCF的混合物,实现了TMDCs中载流子迁移率从双极性到p型的精确调控。

相似文献

1
Ambipolar and n/p-type conduction enhancement of two-dimensional materials by surface charge transfer doping.通过表面电荷转移掺杂实现二维材料的双极及n/p型传导增强
Nanoscale. 2019 Aug 15;11(32):15359-15366. doi: 10.1039/c9nr05343c.
2
Electrically and Optically Tunable Responses in Graphene/Transition-Metal-Dichalcogenide Heterostructures.石墨烯/过渡金属二硫化物异质结构中的电致和光致可调响应。
ACS Appl Mater Interfaces. 2018 Dec 19;10(50):44102-44108. doi: 10.1021/acsami.8b12588. Epub 2018 Dec 7.
3
Modulating Optoelectronic Properties of Two-Dimensional Transition Metal Dichalcogenide Semiconductors by Photoinduced Charge Transfer.通过光致电荷转移调制二维过渡金属二卤族化合物半导体的光电性能。
ACS Nano. 2016 Jan 26;10(1):1671-80. doi: 10.1021/acsnano.5b07457. Epub 2016 Jan 6.
4
Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus.化学调控二维过渡金属二卤族化合物和黑磷
ACS Nano. 2016 Apr 26;10(4):3900-17. doi: 10.1021/acsnano.6b01091. Epub 2016 Apr 4.
5
Understanding Solvent Effects on the Properties of Two-Dimensional Transition Metal Dichalcogenides.理解溶剂效应对二维过渡金属二硫属化物性能的影响。
ACS Appl Mater Interfaces. 2016 Apr 13;8(14):8864-9. doi: 10.1021/acsami.6b01491. Epub 2016 Mar 31.
6
Two-dimensional transition metal dichalcogenides: interface and defect engineering.二维过渡金属二卤族化合物:界面和缺陷工程。
Chem Soc Rev. 2018 May 8;47(9):3100-3128. doi: 10.1039/c8cs00024g.
7
2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices.二维黑磷:用于电子器件的外延生长和界面工程。
Adv Mater. 2018 Nov;30(47):e1802207. doi: 10.1002/adma.201802207. Epub 2018 Aug 13.
8
Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.二维过渡金属二硫属化物及其在场效应晶体管中的电荷载流子迁移率
Nanomicro Lett. 2017;9(4):50. doi: 10.1007/s40820-017-0152-6. Epub 2017 Aug 16.
9
Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors.表面电荷转移掺杂二维场效应晶体管中电子和空穴传导以及接触载流子注入的厚度趋势
ACS Nano. 2020 Oct 27;14(10):13557-13568. doi: 10.1021/acsnano.0c05572. Epub 2020 Oct 7.
10
Wide-range controllable n-doping of molybdenum disulfide (MoS2) through thermal and optical activation.通过热激活和光激活实现二硫化钼(MoS2)的宽范围可控 n 型掺杂。
ACS Nano. 2015 Mar 24;9(3):2368-76. doi: 10.1021/acsnano.5b00153. Epub 2015 Feb 18.

引用本文的文献

1
Structural and Electronic Response of Multigap N-Doped InSe: A Prototypical Material for Broad Spectral Optical Devices.多能隙N掺杂InSe的结构和电子响应:一种用于宽光谱光学器件的典型材料。
ACS Appl Mater Interfaces. 2024 Sep 18;16(37):49902-49912. doi: 10.1021/acsami.4c08610. Epub 2024 Sep 6.
2
2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices.二维层状材料合金:合成及其在电子和光电器件中的应用
Adv Sci (Weinh). 2022 Jan;9(1):e2103036. doi: 10.1002/advs.202103036. Epub 2021 Oct 31.
3
Rapid Degradation of the Electrical Properties of 2D MoS Thin Films under Long-Term Ambient Exposure.
二维MoS薄膜在长期环境暴露下电学性能的快速退化
ACS Omega. 2021 Sep 9;6(37):24075-24081. doi: 10.1021/acsomega.1c03522. eCollection 2021 Sep 21.
4
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications.二维半导体材料电掺杂的最新进展:方法、分析与应用
Nanomaterials (Basel). 2021 Mar 24;11(4):832. doi: 10.3390/nano11040832.
5
Scalable lateral heterojunction by chemical doping of 2D TMD thin films.通过二维过渡金属二硫属化物(TMD)薄膜的化学掺杂实现可扩展的横向异质结。
Sci Rep. 2020 Jul 31;10(1):12970. doi: 10.1038/s41598-020-70127-6.