Gan Lu-Rong, Wang Ya-Rong, Chen Lin, Zhu Hao, Sun Qing-Qing
State Key Lab. of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
Micromachines (Basel). 2019 Aug 23;10(9):558. doi: 10.3390/mi10090558.
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO high-k dielectric extend above source and drain, the integrated density can be well improved, while the erasing and programming speed of the device are respectively decreased to 75 ns and 50 ns. In addition, comprehensive synaptic abilities including long-term potentiation (LTP) and long-term depression (LTD) are demonstrated in our U-shape recessed channel FG memory, highly resembling the biological synapses. These simulation results show that our device has the potential to be well used as embedded memory in neuromorphic computing and MCU (Micro Controller Unit) applications.
我们使用Sentaurus TCAD工具模拟了一个U形凹槽沟道浮栅存储器。由于浮栅（FG）垂直放置在源极（S）和漏极（D）之间，且控制栅（CG）和HfO高k电介质延伸到源极和漏极上方，因此可以很好地提高集成密度，同时器件的擦除和编程速度分别降至75纳秒和50纳秒。此外，我们的U形凹槽沟道FG存储器展示了包括长时程增强（LTP）和长时程抑制（LTD）在内的综合突触能力，与生物突触高度相似。这些模拟结果表明，我们的器件有潜力很好地用作神经形态计算和微控制器单元（MCU）应用中的嵌入式存储器。
