School of Physics , Beijing Institute of Technology , Beijing 100081 , P. R. China.
Department of Chemical Engineering & Materials Science , Yuan Ze University , Taoyuan City 320 , Taiwan, ROC.
ACS Sens. 2019 Sep 27;4(9):2546-2552. doi: 10.1021/acssensors.9b01461. Epub 2019 Sep 10.
SnSe is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe to NO, whereas the direction of charge transfer is the opposite for NH. Notably, a flat molecular band appears around the Fermi energy after NO adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH, NO molecules adsorbed on SnSe have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe.
硒化锡(SnSe)是一种各向异性的双层材料,具有丰富的物理性质,因此有望应用于各种潜在领域。在此,我们通过第一性原理计算研究了 SnSe 的气体传感性能,并通过使用化学气相沉积法生长的少层 SnSe 制成的气体传感器对预测结果进行了验证。理论模拟表明,电子从 SnSe 转移到 NO,而 NH 的电荷转移方向则相反。值得注意的是,NO 吸附后费米能级附近出现了一个平坦的分子带,诱导的分子带接近导带最小值。此外,与 NH 相比,吸附在 SnSe 上的 NO 分子具有更低的吸附能和更高的电荷转移值。SnSe 传感器的动态传感响应证实了理论预测。理论预测与实验演示之间的良好匹配表明,潜在的传感机制与电荷转移和诱导的平坦带有关。我们的研究结果为基于 SnSe 的高性能气体传感器的设计提供了指导。