Xi He, Tang Shi, Ma Xiaohua, Chang Jingjing, Chen Dazheng, Lin Zhenhua, Zhong Peng, Wang Hong, Zhang Chunfu
School of Advanced Materials and Nanotechnology, Xidian University, 266 Xinglong Section of Xifeng Road, Xi'an 710126, China.
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an 710071, China.
ACS Omega. 2017 Jan 31;2(1):326-336. doi: 10.1021/acsomega.6b00465.
Chemical doping has been widely used to finely tune the electrical properties of organic hole-transporting materials (HTMs) that find widespread applications in perovskite solar cells (PSCs). Here, to shed light on the precise role of chemical p-doping in affecting the charge-transport properties of HTMs and photovoltaic performance of PSCs, two kinds of representative dopants, including lithium bis(trifluoromethane)sulfonimide (LiTFSI) and two Co(III) complexes tris[2-(1-pyrazol-1-yl)-4--butylpyridine]cobalt(III)tris[bis(trifluoromethylsulfonyl)imide] (FK209) and tris[2-(1-pyrazol-1-yl)pyridine]cobalt(III)tris[bis(trifluoromethylsulfonyl)imide] (FK102), are employed as the p-type dopant models to dope the 2,2',7,7'-tetrakis[,-di--methoxyphenylamine]-9,9'-spirobifluorene (spiro-OMeTAD) HTM. Both dopants can facilitate the generation of oxidized spiro-OMeTAD radical cation and improve hole mobility. Co-doping of FK209 and LiTFSI is necessary to achieve an optimal doping property and best device performance with power conversion efficiency of 17.8% compared to that of the FK209-doped device (13.5%) and the LiTFSI-doped device (15%). UV-vis absorption, space-charge-limited current measurements, and steady-state and time-resolved photoluminescence measurements have confirmed that with the co-doping of the two kinds of p-dopants in a proper ratio the doped spiro-OMeTAD exhibits a high charge carrier mobility and charge carrier transfer/collection capability.
化学掺杂已被广泛用于精确调节有机空穴传输材料(HTMs)的电学性能,这些材料在钙钛矿太阳能电池(PSCs)中有着广泛应用。在此,为了阐明化学p型掺杂在影响HTMs电荷传输性能和PSCs光伏性能方面的确切作用,使用了两种代表性掺杂剂,包括双(三氟甲烷)磺酰亚胺锂(LiTFSI)以及两种钴(III)配合物三[2-(1-吡唑-1-基)-4-丁基吡啶]钴(III)三[双(三氟甲基磺酰)亚胺](FK209)和三[2-(1-吡唑-1-基)吡啶]钴(III)三[双(三氟甲基磺酰)亚胺](FK102),作为p型掺杂剂模型来掺杂2,2',7,7'-四[对-二-甲氧基苯胺]-9,9'-螺二芴(spiro-OMeTAD)HTM。两种掺杂剂都能促进氧化的spiro-OMeTAD自由基阳离子的生成并提高空穴迁移率。与FK209掺杂器件(13.5%)和LiTFSI掺杂器件(15%)相比,必须将FK209和LiTFSI共掺杂才能实现最佳掺杂性能和最佳器件性能,功率转换效率达到17.8%。紫外-可见吸收光谱、空间电荷限制电流测量以及稳态和时间分辨光致发光测量均证实,以适当比例共掺杂两种p型掺杂剂时,掺杂后的spiro-OMeTAD具有高电荷载流子迁移率和电荷载流子转移/收集能力。