Kaneko Satoru, Ito Takeshi, Kato Chihiro, Tanaka Satomi, Yasuhara Shigeo, Matsuda Akifumi, Yoshimoto Mamoru
Kanagawa Institute of Industrial Science and Technology (KISTEC), Ebina 243-0435, Kanagawa, Japan.
Japan Advanced Chemicals, Sagamihara 252-0243, Kanagawa, Japan.
ACS Omega. 2017 Apr 18;2(4):1523-1528. doi: 10.1021/acsomega.7b00140. eCollection 2017 Apr 30.
Since the discovery of graphene by sticking and peeling scotch tape off graphite, it has also been prepared by other methods, such as thermal decomposition of SiC and chemical vapor deposition (CVD) with catalytic layer. Both the exfoliation and CVD methods impose to transfer the graphene layers on other insulating substrates for device applications. We reported that diamond grows in oxygen atmosphere (Yoshimoto M.; Nature1999, 399, 340-342) in which oxidative etching and depositing carbon compete under equivalent conditions. However, oxygen atmosphere is too intense for graphite growth. Although carbon dioxide (CO) is produced after hydrocarbon combustion, it can be a oxidant in certain situations. Here, we show the direct growth of graphene on insulating substrates in 100% CO environment and observe its layer-by-layer growth on the stepped edge of an insulating substrate. The direct growth can have a significant advantage of excluding the necessary process of transferring the graphene on the insulating substrate over other common methods.
自从通过用胶带粘贴并从石墨上剥离而发现石墨烯以来，它也通过其他方法制备，例如碳化硅的热分解和带有催化层的化学气相沉积（CVD）。对于器件应用而言，剥离法和CVD法都需要将石墨烯层转移到其他绝缘衬底上。我们报道过金刚石在氧气气氛中生长（吉本M.；《自然》1999年，399卷，340 - 342页），在这种气氛中，氧化蚀刻和碳沉积在等效条件下相互竞争。然而，氧气气氛对于石墨生长来说过于强烈。尽管烃燃烧后会产生二氧化碳（CO），但在某些情况下它可以是一种氧化剂。在此，我们展示了在100% CO环境中石墨烯在绝缘衬底上的直接生长，并观察到它在绝缘衬底的台阶边缘上逐层生长。与其他常见方法相比，这种直接生长具有排除在绝缘衬底上转移石墨烯这一必要工艺的显著优势。
