Sate Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
Sci Rep. 2013;3:2465. doi: 10.1038/srep02465.
Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).
由于非凡的载流子迁移率，石墨烯有望在硅之后的电子学中发挥作用。在过渡金属上化学气相沉积石墨烯被认为是实现石墨烯商业化的重要一步。然而，基于过渡金属的制造涉及到不可避免的转移步骤，这可能与石墨烯本身的沉积一样复杂。通过常压化学气相沉积，我们直接在锗衬底上展示了大规模和均匀的高质量石墨烯沉积，该衬底具有晶圆级，被认为可以替代传统的硅，用于下一代高性能金属氧化物半导体场效应晶体管 (MOSFET)。在平衡条件下，不混溶的 Ge-C 体系通过自限制和表面介导的过程而非沉淀过程来控制石墨烯在 Ge 上的沉积，这与其他高碳溶解度的金属观察到的过程不同。我们的技术与现代微电子技术兼容，因此允许与互补金属氧化物半导体 (CMOS) 的大规模生产集成。
