锂离子注入和退火工艺对纳米晶金刚石薄膜场电子发射性能增强的微观结构效应
Microstructural Effect on the Enhancement of Field Electron Emission Properties of Nanocrystalline Diamond Films by Li-Ion Implantation and Annealing Processes.
作者信息
Sankaran Kamatchi Jothiramalingam, Yeh Chien-Jui, Kunuku Srinivasu, Thomas Joseph Palathinkal, Pobedinskas Paulius, Drijkoningen Sien, Sundaravel Balakrishnan, Leou Keh-Chyang, Leung Kam Tong, Van Bael Marlies K, Schreck Matthias, Lin I-Nan, Haenen Ken
机构信息
Institute for Materials Research (IMO), Hasselt University, 3590 Diepenbeek, Belgium.
IMOMEC, IMEC vzw, 3590 Diepenbeek, Belgium.
出版信息
ACS Omega. 2018 Aug 27;3(8):9956-9965. doi: 10.1021/acsomega.8b01104. eCollection 2018 Aug 31.
The impact of lithium-ion implantation and postannealing processes on improving the electrical conductivity and field electron emission (FEE) characteristics of nitrogen-doped nanocrystalline diamond (nNCD) films was observed to be distinctly different from those of undoped NCD (uNCD) films. A high-dose Li-ion implantation induced the formation of electron trap centers inside the diamond grains and amorphous carbon (a-C) phases in grain boundaries for both types of NCD films. Postannealing at 1000 °C healed the defects, eliminated the electron trap centers, and converted the a-C into nanographitic phases. The abundant nanographitic phases in the grain boundaries of the nNCD films as compared to the uNCD films made an interconnected path for effectual electron transport and consequently enhanced the FEE characteristics of nNCD films.
锂离子注入和后退火工艺对改善氮掺杂纳米晶金刚石（nNCD）薄膜的电导率和场电子发射（FEE）特性的影响，被观察到与未掺杂的纳米晶金刚石（uNCD）薄膜明显不同。高剂量锂离子注入在两种类型的纳米晶金刚石薄膜的金刚石晶粒内部和晶界处诱导形成电子陷阱中心和非晶碳（a-C）相。在1000℃下进行后退火修复了缺陷，消除了电子陷阱中心，并将a-C转化为纳米石墨相。与uNCD薄膜相比，nNCD薄膜晶界中丰富的纳米石墨相为有效的电子传输形成了相互连接的路径，从而增强了nNCD薄膜的场电子发射特性。
Zotero 插件