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利用电子束光刻写入的相位掩模通过近场全息术制造的软X射线变线间距光栅。

Soft X-ray varied-line-spacing gratings fabricated by near-field holography using an electron beam lithography-written phase mask.

作者信息

Lin Dakui, Liu Zhengkun, Dietrich Kay, Sokolov Andréy, Sertsu Mewael Giday, Zhou Hongjun, Huo Tonglin, Kroker Stefanie, Chen Huoyao, Qiu Keqiang, Xu Xiangdong, Schäfers Franz, Liu Ying, Kley Ernst Bernhard, Hong Yilin

机构信息

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hezuohua South Road 42, Hefei 230029, People's Republic of China.

Institut für Angewandte Physik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.

出版信息

J Synchrotron Radiat. 2019 Sep 1;26(Pt 5):1782-1789. doi: 10.1107/S1600577519008245. Epub 2019 Aug 16.

Abstract

A fabrication method comprising near-field holography (NFH) with an electron beam lithography (EBL)-written phase mask was developed to fabricate soft X-ray varied-line-spacing gratings (VLSGs). An EBL-written phase mask with an area of 52 mm × 30 mm and a central line density greater than 3000 lines mm was used. The introduction of the EBL-written phase mask substantially simplified the NFH optics for pattern transfer. The characterization of the groove density distribution and diffraction efficiency of the fabricated VLSGs indicates that the EBL-NFH method is feasible and promising for achieving high-accuracy groove density distributions with corresponding image properties. Vertical stray light is suppressed in the soft X-ray spectral range.

摘要

一种采用电子束光刻(EBL)写入的相位掩模的近场全息术(NFH)来制造软X射线变线间距光栅(VLSG)的制造方法被开发出来。使用了一个面积为52 mm×30 mm且中心线密度大于3000线/mm的EBL写入的相位掩模。EBL写入的相位掩模的引入极大地简化了用于图案转移的NFH光学系统。对制造的VLSG的槽密度分布和衍射效率的表征表明,EBL-NFH方法对于实现具有相应图像特性的高精度槽密度分布是可行且有前景的。在软X射线光谱范围内垂直杂散光得到了抑制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/601f/6730620/be579b3ea4f7/s-26-01782-fig1.jpg

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