Solar-Blind Photodetector with Lower Dark Current and Higher / Ratio Based on MgZnO Film Deposited by Pulsed Laser Deposition Method.

In this study, pulsed laser deposition method (PLD) was employed to grow MgZnO films on quartz substrates. The optimal deposition temperature of 300 °C for MgZnO film was decided and MgZnO, MgZnO and MgZnO films were grown respectively using MgZnO targets with different Mg contents ( = 0.3, 0.5 and 0.7). As-deposited MgZnO film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current () of 88 pA, higher peak responsivity of 0.10 A/W and bigger / ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgZnO films.