基于脉冲激光沉积法制备的MgZnO薄膜的具有更低暗电流和更高/比的日盲光电探测器。（注：原文中“更高/比”表述不太清晰准确，可能存在信息缺失）

Solar-Blind Photodetector with Lower Dark Current and Higher / Ratio Based on MgZnO Film Deposited by Pulsed Laser Deposition Method.

作者信息

Cao Pei-Jiang, Wang Qing, Rao Ch N, Han Shun, Xu Wang-Ying, Fang Ming, Liu Xin-Ke, Zeng Yu-Xiang, Liu Wen-Jun, Zhu De-Liang, Lu You-Ming

机构信息

Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, and College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.

出版信息

J Nanosci Nanotechnol. 2021 Mar 1;21(3):1703-1710. doi: 10.1166/jnn.2021.17210.

DOI:10.1166/jnn.2021.17210

PMID:33404436

Abstract

In this study, pulsed laser deposition method (PLD) was employed to grow MgZnO films on quartz substrates. The optimal deposition temperature of 300 °C for MgZnO film was decided and MgZnO, MgZnO and MgZnO films were grown respectively using MgZnO targets with different Mg contents ( = 0.3, 0.5 and 0.7). As-deposited MgZnO film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current () of 88 pA, higher peak responsivity of 0.10 A/W and bigger I/I ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgZnO films.

摘要

在本研究中，采用脉冲激光沉积法（PLD）在石英衬底上生长MgZnO薄膜。确定了MgZnO薄膜的最佳沉积温度为300℃，并分别使用具有不同Mg含量（x = 0.3、0.5和0.7）的MgZnO靶材生长了MgZnO薄膜。沉积态的MgZnO薄膜具有混合相（六方相和立方相）结构，合适的带隙为4.68 eV，表面粗糙度较小，为1.72 nm，并基于此制备了日盲光电探测器（PD）。我们的PD的关键特性包括：截止波长为265 nm，位于日盲波段；较低的暗电流（Id）为88 pA；较高的峰值响应度为0.10 A/W；较大的Ion/Id比为1688，这些为基于MgZnO薄膜的日盲PD的应用提供了新思路。