Deep-ultraviolet photodetector based on pulsed-laser-deposited CsCuI films/n-Si heterojunction.

All-inorganic lead-free perovskite thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on /- was constructed, and the deep-ultraviolet photoresponse was obtained. A high / ratio of 130 was achieved at -1.3, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44×10⋅⋅. Moreover, the device showed good stability after being exposed to air for 30 days.